Simulation of electron/solid interaction and its application to quantitative analysis by Auger electron spectroscopy

Shingo Ichimura, Ding Ze‐Jun, R. Shimizu

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 Å) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 Å) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.

Original languageEnglish
Pages (from-to)149-159
Number of pages11
JournalSurface and Interface Analysis
Volume13
Issue number2-3
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

Fingerprint

Auger electron spectroscopy
quantitative analysis
Auger spectroscopy
electron spectroscopy
Electrons
Chemical analysis
electrons
simulation
interactions
Inelastic scattering
Electron scattering
Substrates
Backscattering
backscattering
energy distribution
electron scattering
inelastic scattering
Thin films
matrices
thin films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Simulation of electron/solid interaction and its application to quantitative analysis by Auger electron spectroscopy. / Ichimura, Shingo; Ze‐Jun, Ding; Shimizu, R.

In: Surface and Interface Analysis, Vol. 13, No. 2-3, 01.01.1988, p. 149-159.

Research output: Contribution to journalArticle

@article{70c9c65f15bd4ac2a6ec19035b1d1113,
title = "Simulation of electron/solid interaction and its application to quantitative analysis by Auger electron spectroscopy",
abstract = "The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 {\AA}) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 {\AA}) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.",
author = "Shingo Ichimura and Ding Ze‐Jun and R. Shimizu",
year = "1988",
month = "1",
day = "1",
doi = "10.1002/sia.740130207",
language = "English",
volume = "13",
pages = "149--159",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "2-3",

}

TY - JOUR

T1 - Simulation of electron/solid interaction and its application to quantitative analysis by Auger electron spectroscopy

AU - Ichimura, Shingo

AU - Ze‐Jun, Ding

AU - Shimizu, R.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 Å) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 Å) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.

AB - The simulation of electron/solid interactions is discussed, with emphasis on its applicability to the matrix correction in quantitative analysis by AES, and to its potential use in background substraction in AES. The Monte Carlo calculation models are first explained, which have been improved to allow the estimation of (i) back‐scattering correction factors, and (ii) energy profiles of back‐scattered electrons in the high‐energy region (i.e. elastically‐scattered electrons and the characteristic loss structures) and the slow secondary region. For this purpose, a dielectric approach is used for the treatment of the electron inelastic scattering in the solid. Then, the models are applied to samples with bi‐layer structures, and the change of Si Auger signals observed during sputter‐etching of a sample consisting of a Si thin film (7000 Å) on a W substrate is well explained. Changes in the energy distributions of back‐scattered electrons during the formation of very thin (5 to 100 Å) Cu films on a Si substrate are also estimated by the Monte Carlo calculation, together with the shapes of the elastic peak and the characteristic loss peaks.

UR - http://www.scopus.com/inward/record.url?scp=0024107970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024107970&partnerID=8YFLogxK

U2 - 10.1002/sia.740130207

DO - 10.1002/sia.740130207

M3 - Article

AN - SCOPUS:0024107970

VL - 13

SP - 149

EP - 159

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 2-3

ER -