Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

Yutaka Arita, Koji Niita, Yuji Kihara, Junich Mitsuhasi, Mikio Takai, Izumi Ogawa, Tadafumi Kishimoto, Tsutomu Yoshihara

    Research output: Contribution to journalArticle

    Abstract

    The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

    Original languageEnglish
    Pages (from-to)3377-3379
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number6 A
    DOIs
    Publication statusPublished - 2007 Jun 6

    Fingerprint

    single event upsets
    thermal neutrons
    Heavy ions
    heavy ions
    Neutrons
    simulation
    random access memory
    Semiconductor devices
    semiconductor devices
    Data storage equipment
    Hot Temperature
    Experiments
    energy

    Keywords

    • PHITS
    • Simulation
    • Single-event upset
    • SRAM
    • Thermal neutron

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system. / Arita, Yutaka; Niita, Koji; Kihara, Yuji; Mitsuhasi, Junich; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi; Yoshihara, Tsutomu.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 6 A, 06.06.2007, p. 3377-3379.

    Research output: Contribution to journalArticle

    Arita, Yutaka ; Niita, Koji ; Kihara, Yuji ; Mitsuhasi, Junich ; Takai, Mikio ; Ogawa, Izumi ; Kishimoto, Tadafumi ; Yoshihara, Tsutomu. / Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 6 A. pp. 3377-3379.
    @article{5b8ad7fb0b8c42759223dc6143dc93ba,
    title = "Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system",
    abstract = "The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.",
    keywords = "PHITS, Simulation, Single-event upset, SRAM, Thermal neutron",
    author = "Yutaka Arita and Koji Niita and Yuji Kihara and Junich Mitsuhasi and Mikio Takai and Izumi Ogawa and Tadafumi Kishimoto and Tsutomu Yoshihara",
    year = "2007",
    month = "6",
    day = "6",
    doi = "10.1143/JJAP.46.3377",
    language = "English",
    volume = "46",
    pages = "3377--3379",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "6 A",

    }

    TY - JOUR

    T1 - Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

    AU - Arita, Yutaka

    AU - Niita, Koji

    AU - Kihara, Yuji

    AU - Mitsuhasi, Junich

    AU - Takai, Mikio

    AU - Ogawa, Izumi

    AU - Kishimoto, Tadafumi

    AU - Yoshihara, Tsutomu

    PY - 2007/6/6

    Y1 - 2007/6/6

    N2 - The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

    AB - The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

    KW - PHITS

    KW - Simulation

    KW - Single-event upset

    KW - SRAM

    KW - Thermal neutron

    UR - http://www.scopus.com/inward/record.url?scp=34547850245&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34547850245&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.46.3377

    DO - 10.1143/JJAP.46.3377

    M3 - Article

    AN - SCOPUS:34547850245

    VL - 46

    SP - 3377

    EP - 3379

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 6 A

    ER -