Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

Yutaka Arita; Koji Niita; Yuji Kihara; Junich Mitsuhasi; Mikio Takai; Izumi Ogawa; Tadafumi Kishimoto; Tsutomu Yoshihara

doi:10.1143/JJAP.46.3377

Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

Yutaka Arita^*, Koji Niita, Yuji Kihara, Junich Mitsuhasi, Mikio Takai, Izumi Ogawa, Tadafumi Kishimoto, Tsutomu Yoshihara

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

Original language	English
Pages (from-to)	3377-3379
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.46.3377
Publication status	Published - 2007 Jun 6

Keywords

PHITS
Simulation
Single-event upset
SRAM
Thermal neutron

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1143/JJAP.46.3377

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Arita, Y., Niita, K., Kihara, Y., Mitsuhasi, J., Takai, M., Ogawa, I., Kishimoto, T., & Yoshihara, T. (2007). Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(6 A), 3377-3379. https://doi.org/10.1143/JJAP.46.3377

Arita, Y, Niita, K, Kihara, Y, Mitsuhasi, J, Takai, M, Ogawa, I, Kishimoto, T & Yoshihara, T 2007, 'Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 6 A, pp. 3377-3379. https://doi.org/10.1143/JJAP.46.3377

@article{5b8ad7fb0b8c42759223dc6143dc93ba,

title = "Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system",

abstract = "The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.",

keywords = "PHITS, Simulation, Single-event upset, SRAM, Thermal neutron",

author = "Yutaka Arita and Koji Niita and Yuji Kihara and Junich Mitsuhasi and Mikio Takai and Izumi Ogawa and Tadafumi Kishimoto and Tsutomu Yoshihara",

year = "2007",

month = jun,

day = "6",

doi = "10.1143/JJAP.46.3377",

language = "English",

volume = "46",

pages = "3377--3379",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

AU - Arita, Yutaka

AU - Niita, Koji

AU - Kihara, Yuji

AU - Mitsuhasi, Junich

AU - Takai, Mikio

AU - Ogawa, Izumi

AU - Kishimoto, Tadafumi

AU - Yoshihara, Tsutomu

PY - 2007/6/6

Y1 - 2007/6/6

N2 - The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

AB - The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

KW - PHITS

KW - Simulation

KW - Single-event upset

KW - SRAM

KW - Thermal neutron

UR - http://www.scopus.com/inward/record.url?scp=34547850245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547850245&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.3377

DO - 10.1143/JJAP.46.3377

M3 - Article

AN - SCOPUS:34547850245

SN - 0021-4922

VL - 46

SP - 3377

EP - 3379

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 A

ER -

Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

Abstract

Keywords

ASJC Scopus subject areas

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