Abstract
We propose a technique for the simultaneous fabrication of a through-glass interconnect via (TGV) and Au bumps using dry filling process of submicron Au particles. First, dry film resist holes were fabricated over glass through holes by photolithography. Next, submicron Au particles were filled into both the glass and resist holes, and sintered. We define a TGV sandwiched between two Au bumps as I-structure TGV. Cross-sectional SEM images showed that the proposed I-structure TGV was successfully fabricated without significant voids. Furthermore, the glass substrate covered with thin Au film and the Au bumps were well sealed because the Au particles shrank during a sintering. Four-probe method using daisy chain revealed that the resistance of the single I-structure TGV was 0.11 Ω. These results indicate that the proposed fabrication method will be very useful for various applications of glass interposers or glass IC chips.
| Original language | English |
|---|---|
| Title of host publication | 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings |
| Publisher | IEEE Computer Society |
| Pages | 270-272 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509047697 |
| DOIs | |
| Publication status | Published - 2016 Dec 27 |
| Event | 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Taipei, Taiwan, Province of China Duration: 2016 Oct 26 → 2016 Oct 28 |
Other
| Other | 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 |
|---|---|
| Country | Taiwan, Province of China |
| City | Taipei |
| Period | 16/10/26 → 16/10/28 |
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ASJC Scopus subject areas
- Hardware and Architecture
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Simultaneous fabrication of a through-glass interconnect via and bumps using dry filling process of submicron gold particles. / Nomura, Kazuya; Okada, Akiko; Shoji, Shuichi; Ogashiwa, Toshinori; Mizuno, Jun.
11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings. IEEE Computer Society, 2016. p. 270-272 7799988.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Simultaneous fabrication of a through-glass interconnect via and bumps using dry filling process of submicron gold particles
AU - Nomura, Kazuya
AU - Okada, Akiko
AU - Shoji, Shuichi
AU - Ogashiwa, Toshinori
AU - Mizuno, Jun
PY - 2016/12/27
Y1 - 2016/12/27
N2 - We propose a technique for the simultaneous fabrication of a through-glass interconnect via (TGV) and Au bumps using dry filling process of submicron Au particles. First, dry film resist holes were fabricated over glass through holes by photolithography. Next, submicron Au particles were filled into both the glass and resist holes, and sintered. We define a TGV sandwiched between two Au bumps as I-structure TGV. Cross-sectional SEM images showed that the proposed I-structure TGV was successfully fabricated without significant voids. Furthermore, the glass substrate covered with thin Au film and the Au bumps were well sealed because the Au particles shrank during a sintering. Four-probe method using daisy chain revealed that the resistance of the single I-structure TGV was 0.11 Ω. These results indicate that the proposed fabrication method will be very useful for various applications of glass interposers or glass IC chips.
AB - We propose a technique for the simultaneous fabrication of a through-glass interconnect via (TGV) and Au bumps using dry filling process of submicron Au particles. First, dry film resist holes were fabricated over glass through holes by photolithography. Next, submicron Au particles were filled into both the glass and resist holes, and sintered. We define a TGV sandwiched between two Au bumps as I-structure TGV. Cross-sectional SEM images showed that the proposed I-structure TGV was successfully fabricated without significant voids. Furthermore, the glass substrate covered with thin Au film and the Au bumps were well sealed because the Au particles shrank during a sintering. Four-probe method using daisy chain revealed that the resistance of the single I-structure TGV was 0.11 Ω. These results indicate that the proposed fabrication method will be very useful for various applications of glass interposers or glass IC chips.
UR - http://www.scopus.com/inward/record.url?scp=85009874481&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85009874481&partnerID=8YFLogxK
U2 - 10.1109/IMPACT.2016.7799988
DO - 10.1109/IMPACT.2016.7799988
M3 - Conference contribution
AN - SCOPUS:85009874481
SP - 270
EP - 272
BT - 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings
PB - IEEE Computer Society
ER -