Single chip RF-CMOS front end LSI for GSM handy phone

Yasunori Miyahara, Shunji Kawaguchi, Shoichi Shimizu, Nobuyuki Itoh, Kazuhiro Kato

Research output: Contribution to journalConference article

Abstract

A 900MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900MHz VCO with spiral inductor and vari-cap diode, new IF local frequency circuit, and effective image rejection system, are introduced.

Original languageEnglish
Pages (from-to)320-321
Number of pages2
JournalDigest of Technical Papers - IEEE International Conference on Consumer Electronics
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 IEEE International Conference on Consumer Electronics, ICCE'99 - Los Angeles, CA, USA
Duration: 1999 Jun 221999 Jun 24

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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