Single chip RF-CMOS front end LSI for GSM handy phone

Yasunori Miyahara; Shunji Kawaguchi; Shoichi Shimizu; Nobuyuki Itoh; Kazuhiro Kato

Single chip RF-CMOS front end LSI for GSM handy phone

Yasunori Miyahara^*, Shunji Kawaguchi, Shoichi Shimizu, Nobuyuki Itoh, Kazuhiro Kato

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 900MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900MHz VCO with spiral inductor and vari-cap diode, new IF local frequency circuit, and effective image rejection system, are introduced.

Original language	English
Pages (from-to)	320-321
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Conference on Consumer Electronics
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 IEEE International Conference on Consumer Electronics, ICCE'99 - Los Angeles, CA, USA Duration: 1999 Jun 22 → 1999 Jun 24

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{3ee40992de984f7faf636447daf409c4,

title = "Single chip RF-CMOS front end LSI for GSM handy phone",

abstract = "A 900MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900MHz VCO with spiral inductor and vari-cap diode, new IF local frequency circuit, and effective image rejection system, are introduced.",

author = "Yasunori Miyahara and Shunji Kawaguchi and Shoichi Shimizu and Nobuyuki Itoh and Kazuhiro Kato",

year = "1999",

language = "English",

pages = "320--321",

journal = "Digest of Technical Papers - IEEE International Conference on Consumer Electronics",

issn = "0747-668X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE International Conference on Consumer Electronics, ICCE'99 ; Conference date: 22-06-1999 Through 24-06-1999",

}

TY - JOUR

T1 - Single chip RF-CMOS front end LSI for GSM handy phone

AU - Miyahara, Yasunori

AU - Kawaguchi, Shunji

AU - Shimizu, Shoichi

AU - Itoh, Nobuyuki

AU - Kato, Kazuhiro

PY - 1999

Y1 - 1999

N2 - A 900MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900MHz VCO with spiral inductor and vari-cap diode, new IF local frequency circuit, and effective image rejection system, are introduced.

AB - A 900MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900MHz VCO with spiral inductor and vari-cap diode, new IF local frequency circuit, and effective image rejection system, are introduced.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033334833&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033334833

SN - 0747-668X

SP - 320

EP - 321

JO - Digest of Technical Papers - IEEE International Conference on Consumer Electronics

JF - Digest of Technical Papers - IEEE International Conference on Consumer Electronics

T2 - Proceedings of the 1999 IEEE International Conference on Consumer Electronics, ICCE'99

Y2 - 22 June 1999 through 24 June 1999

ER -

Single chip RF-CMOS front end LSI for GSM handy phone

Abstract

ASJC Scopus subject areas

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