Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure

Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki, Aoi Morishita, Akihiro Kawano, Yosuke Sasama, Takahide Yamaguchi, Yoshihiko Takano, Minoru Tachiki, Shuuichi Ooi, Kazuto Hirata, Shunichi Arisawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

Abstract

Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor–weak superconductor–superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.

Original languageEnglish
Article number15214
JournalScientific reports
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

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Diamond
Boron
Equipment and Supplies
Transition Temperature
Microwaves

ASJC Scopus subject areas

  • General

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Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure. / Kageura, Taisuke; Hideko, Masakuni; Tsuyuzaki, Ikuto; Morishita, Aoi; Kawano, Akihiro; Sasama, Yosuke; Yamaguchi, Takahide; Takano, Yoshihiko; Tachiki, Minoru; Ooi, Shuuichi; Hirata, Kazuto; Arisawa, Shunichi; Kawarada, Hiroshi.

In: Scientific reports, Vol. 9, No. 1, 15214, 01.12.2019.

Research output: Contribution to journalArticle

Kageura, T, Hideko, M, Tsuyuzaki, I, Morishita, A, Kawano, A, Sasama, Y, Yamaguchi, T, Takano, Y, Tachiki, M, Ooi, S, Hirata, K, Arisawa, S & Kawarada, H 2019, 'Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure', Scientific reports, vol. 9, no. 1, 15214. https://doi.org/10.1038/s41598-019-51596-w
Kageura, Taisuke ; Hideko, Masakuni ; Tsuyuzaki, Ikuto ; Morishita, Aoi ; Kawano, Akihiro ; Sasama, Yosuke ; Yamaguchi, Takahide ; Takano, Yoshihiko ; Tachiki, Minoru ; Ooi, Shuuichi ; Hirata, Kazuto ; Arisawa, Shunichi ; Kawarada, Hiroshi. / Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure. In: Scientific reports. 2019 ; Vol. 9, No. 1.
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AU - Kawano, Akihiro

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