Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

Shin Ichi Karimoto; Kenji Ueda; Michio Naito; Tadayuki Imai

doi:10.1063/1.1410872

Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

Shin Ichi Karimoto^*, Kenji Ueda, Michio Naito, Tadayuki Imai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Single-crystalline Sr₁ _xLa_xCuO₂ thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO₃ substrates. The best film showed T^onset_c=41.5 K and T^zero_c=39.0 K, which is close to the highest T^onset_c of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ just above T_c.

Original language	English
Pages (from-to)	2767-2769
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	17
DOIs	https://doi.org/10.1063/1.1410872
Publication status	Published - 2001 Oct 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy",

abstract = "Single-crystalline Sr1 xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tonsetc=41.5 K and Tzeroc=39.0 K, which is close to the highest Tonsetc of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ just above Tc.",

author = "Karimoto, {Shin Ichi} and Kenji Ueda and Michio Naito and Tadayuki Imai",

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T1 - Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

AU - Karimoto, Shin Ichi

AU - Ueda, Kenji

AU - Naito, Michio

AU - Imai, Tadayuki

PY - 2001/10/22

Y1 - 2001/10/22

N2 - Single-crystalline Sr1 xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tonsetc=41.5 K and Tzeroc=39.0 K, which is close to the highest Tonsetc of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ just above Tc.

AB - Single-crystalline Sr1 xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tonsetc=41.5 K and Tzeroc=39.0 K, which is close to the highest Tonsetc of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ just above Tc.

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Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

Abstract

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