Single grain and single grain boundary resistance of pentacene thin film characterized using a nanoscale electrode array

Tomohiko Edura, Hiromasa Takahashi, Masashi Nakata, Harumasa Onozato, Jun Mizuno, Ken Tsutsui, Masamitsu Haemori, Kenji Itaka, Hideomi Koinuma, Yasuo Wada

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, we report on a less than 100-nm-wide nanoscale electrode array, with which the field-effect mobilities of a single grain and a single grain boundary in organic thin films are characterized. The method of fabricating the nanoscale electrode array and the evaluation results of the pentacene thin film are described. The nanoscale electrode array was fabricated by EB lithography and a liftoff process. The pentacene thin film was deposited by molecular-beam epitaxy (MBE). The resistances of a single grain and a single grain boundary were estimated to be around 10 and 100 MΩ, respectively, and the field-effect mobility was estimated to be around 1 cm2/(V s), which is almost comparable to the highest value ever reported. These results confirm that a single crystal is essential for high performance organic thin-film transistors.

Original languageEnglish
Pages (from-to)3708-3711
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Fingerprint

Grain boundaries
grain boundaries
Thin films
Electrodes
electrodes
thin films
Thin film transistors
Molecular beam epitaxy
Lithography
Single crystals
transistors
molecular beam epitaxy
lithography
evaluation
single crystals

Keywords

  • Field-effect mobility
  • Nanoscale electrode array
  • Organic thin-film transistor
  • Pentacene
  • Resistance
  • Single grain
  • Single grain boundary

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single grain and single grain boundary resistance of pentacene thin film characterized using a nanoscale electrode array. / Edura, Tomohiko; Takahashi, Hiromasa; Nakata, Masashi; Onozato, Harumasa; Mizuno, Jun; Tsutsui, Ken; Haemori, Masamitsu; Itaka, Kenji; Koinuma, Hideomi; Wada, Yasuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3708-3711.

Research output: Contribution to journalArticle

Edura, Tomohiko ; Takahashi, Hiromasa ; Nakata, Masashi ; Onozato, Harumasa ; Mizuno, Jun ; Tsutsui, Ken ; Haemori, Masamitsu ; Itaka, Kenji ; Koinuma, Hideomi ; Wada, Yasuo. / Single grain and single grain boundary resistance of pentacene thin film characterized using a nanoscale electrode array. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3708-3711.
@article{0512d6c6e5684532be0f9ad4b12a4d8a,
title = "Single grain and single grain boundary resistance of pentacene thin film characterized using a nanoscale electrode array",
abstract = "In this paper, we report on a less than 100-nm-wide nanoscale electrode array, with which the field-effect mobilities of a single grain and a single grain boundary in organic thin films are characterized. The method of fabricating the nanoscale electrode array and the evaluation results of the pentacene thin film are described. The nanoscale electrode array was fabricated by EB lithography and a liftoff process. The pentacene thin film was deposited by molecular-beam epitaxy (MBE). The resistances of a single grain and a single grain boundary were estimated to be around 10 and 100 MΩ, respectively, and the field-effect mobility was estimated to be around 1 cm2/(V s), which is almost comparable to the highest value ever reported. These results confirm that a single crystal is essential for high performance organic thin-film transistors.",
keywords = "Field-effect mobility, Nanoscale electrode array, Organic thin-film transistor, Pentacene, Resistance, Single grain, Single grain boundary",
author = "Tomohiko Edura and Hiromasa Takahashi and Masashi Nakata and Harumasa Onozato and Jun Mizuno and Ken Tsutsui and Masamitsu Haemori and Kenji Itaka and Hideomi Koinuma and Yasuo Wada",
year = "2006",
month = "4",
day = "25",
doi = "10.1143/JJAP.45.3708",
language = "English",
volume = "45",
pages = "3708--3711",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Single grain and single grain boundary resistance of pentacene thin film characterized using a nanoscale electrode array

AU - Edura, Tomohiko

AU - Takahashi, Hiromasa

AU - Nakata, Masashi

AU - Onozato, Harumasa

AU - Mizuno, Jun

AU - Tsutsui, Ken

AU - Haemori, Masamitsu

AU - Itaka, Kenji

AU - Koinuma, Hideomi

AU - Wada, Yasuo

PY - 2006/4/25

Y1 - 2006/4/25

N2 - In this paper, we report on a less than 100-nm-wide nanoscale electrode array, with which the field-effect mobilities of a single grain and a single grain boundary in organic thin films are characterized. The method of fabricating the nanoscale electrode array and the evaluation results of the pentacene thin film are described. The nanoscale electrode array was fabricated by EB lithography and a liftoff process. The pentacene thin film was deposited by molecular-beam epitaxy (MBE). The resistances of a single grain and a single grain boundary were estimated to be around 10 and 100 MΩ, respectively, and the field-effect mobility was estimated to be around 1 cm2/(V s), which is almost comparable to the highest value ever reported. These results confirm that a single crystal is essential for high performance organic thin-film transistors.

AB - In this paper, we report on a less than 100-nm-wide nanoscale electrode array, with which the field-effect mobilities of a single grain and a single grain boundary in organic thin films are characterized. The method of fabricating the nanoscale electrode array and the evaluation results of the pentacene thin film are described. The nanoscale electrode array was fabricated by EB lithography and a liftoff process. The pentacene thin film was deposited by molecular-beam epitaxy (MBE). The resistances of a single grain and a single grain boundary were estimated to be around 10 and 100 MΩ, respectively, and the field-effect mobility was estimated to be around 1 cm2/(V s), which is almost comparable to the highest value ever reported. These results confirm that a single crystal is essential for high performance organic thin-film transistors.

KW - Field-effect mobility

KW - Nanoscale electrode array

KW - Organic thin-film transistor

KW - Pentacene

KW - Resistance

KW - Single grain

KW - Single grain boundary

UR - http://www.scopus.com/inward/record.url?scp=33646929220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646929220&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.3708

DO - 10.1143/JJAP.45.3708

M3 - Article

AN - SCOPUS:33646929220

VL - 45

SP - 3708

EP - 3711

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -