Single ion implantation of Ge donor impurity in silicon transistors

E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, T. Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transistors and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
Publication statusPublished - 2015 Sep 24
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: 2015 Jun 142015 Jun 15

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Other

OtherSilicon Nanoelectronics Workshop, SNW 2015
CountryJapan
CityKyoto
Period15/6/1415/6/15

Keywords

  • Decision support systems
  • Electron devices
  • Meetings
  • Nanoelectronics
  • Nanoscale devices
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Single ion implantation of Ge donor impurity in silicon transistors'. Together they form a unique fingerprint.

Cite this