Single ion implantation of Ge donor impurity in silicon transistors

E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, Takashi Tanii

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transistors and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.

    Original languageEnglish
    Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9784863485389
    Publication statusPublished - 2015 Sep 24
    EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
    Duration: 2015 Jun 142015 Jun 15

    Other

    OtherSilicon Nanoelectronics Workshop, SNW 2015
    CountryJapan
    CityKyoto
    Period15/6/1415/6/15

      Fingerprint

    Keywords

    • Decision support systems
    • Electron devices
    • Meetings
    • Nanoelectronics
    • Nanoscale devices
    • Silicon

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Prati, E., Chiba, Y., Yano, M., Kumagai, K., Hori, M., Ferrari, G., Shinada, T., & Tanii, T. (2015). Single ion implantation of Ge donor impurity in silicon transistors. In 2015 Silicon Nanoelectronics Workshop, SNW 2015 [7275290] Institute of Electrical and Electronics Engineers Inc..