Abstract
We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.
| Original language | English |
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| Title of host publication | 2019 Compound Semiconductor Week, CSW 2019 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781728100807 |
| DOIs | |
| Publication status | Published - 2019 May |
| Event | 2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan Duration: 2019 May 19 → 2019 May 23 |
Publication series
| Name | 2019 Compound Semiconductor Week, CSW 2019 - Proceedings |
|---|
Conference
| Conference | 2019 Compound Semiconductor Week, CSW 2019 |
|---|---|
| Country | Japan |
| City | Nara |
| Period | 19/5/19 → 19/5/23 |
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Keywords
- Membrane distributed reflector laser
- SiC
- Single-mode operation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Atomic and Molecular Physics, and Optics
Cite this
Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers. / Yamaoka, Suguru; Nakao, Ryo; Fujii, Takuro; Takeda, Koji; Hiraki, Tatsurou; Nishi, Hidetaka; Kakitsuka, Takaaki; Tsuchizawa, Tai; Matsuo, Shinji.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819274 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Single-mode Operation of 1.3-μm Membrane Distributed Reflector Lasers on SiC Wafers
AU - Yamaoka, Suguru
AU - Nakao, Ryo
AU - Fujii, Takuro
AU - Takeda, Koji
AU - Hiraki, Tatsurou
AU - Nishi, Hidetaka
AU - Kakitsuka, Takaaki
AU - Tsuchizawa, Tai
AU - Matsuo, Shinji
PY - 2019/5
Y1 - 2019/5
N2 - We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.
AB - We have fabricated a 1.3-μm membrane distributed reflector (DR) lasers on a SiC substrate using direct-bonding and buried regrowth techniques. The side-mode suppression ratio of ∼40 dB was obtained in room-temperature continuous-wave (RT-CW) operation.
KW - Membrane distributed reflector laser
KW - SiC
KW - Single-mode operation
UR - http://www.scopus.com/inward/record.url?scp=85072982655&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072982655&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2019.8819274
DO - 10.1109/ICIPRM.2019.8819274
M3 - Conference contribution
AN - SCOPUS:85072982655
T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -