SiO x N y back-end integration technologies for heterogeneously integrated Si platform

H. Nishi, T. Tsuchizawa, Takaaki Kakitsuka, K. Hasebe, K. Takeda, T. Hiraki, T. Fujii, T. Yamamoto, S. Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photonic integrated circuits on Si have been attracting much attention and are being intensively investigated. On a Si photonic chip, in addition to the monolithic Si and Ge photonic devices, InP-based active devices can be integrated heterogeneously by utilizing direct-bonding technology. To connect these functional devices, we have proposed back-end photonic wiring using silicon oxynitride (SiO x N y ) -based waveguides. In this paper, we report recent progress in our back-end photonics integration technology. First, back-end SiOx waveguide integration with InP-based membrane active devices will be presented. Then, our technology for the low-loss SiO x N y deposition at low temperature will be presented, which is applied to a SiN waveguide for compact arrayed-waveguide-grating (AWG) filter and Ge integration. These technologies have attributes for future highly integrated photonic circuits on Si.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Materials
Subtitle of host publicationMaterials, Processing, and Devices 7
EditorsJ. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
PublisherElectrochemical Society Inc.
Pages211-221
Number of pages11
Edition8
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number8
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Nishi, H., Tsuchizawa, T., Kakitsuka, T., Hasebe, K., Takeda, K., Hiraki, T., Fujii, T., Yamamoto, T., & Matsuo, S. (2016). SiO x N y back-end integration technologies for heterogeneously integrated Si platform In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 211-221). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0211ecst