SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C

Tetsuya Nishiguchi, Takeshi Noyori, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.

Original languageEnglish
Pages (from-to)313-316
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Volume48
Issue number5
Publication statusPublished - 2005 Aug 17
Externally publishedYes

Fingerprint

Dielectric films
Ozone
Silicon
ozone
Gases
silicon
gases
supplying
Plasma enhanced chemical vapor deposition
Leakage currents
Silicon Dioxide
Refractive index
leakage
Current density
Silica
Electric fields
vapor deposition
refractivity
current density
silicon dioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces

Cite this

SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C. / Nishiguchi, Tetsuya; Noyori, Takeshi; Morikawa, Yoshiki; Kekura, Mitsuru; Nonaka, Hidehiko; Ichimura, Shingo.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 48, No. 5, 17.08.2005, p. 313-316.

Research output: Contribution to journalArticle

Nishiguchi, Tetsuya ; Noyori, Takeshi ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Nonaka, Hidehiko ; Ichimura, Shingo. / SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C. In: Shinku/Journal of the Vacuum Society of Japan. 2005 ; Vol. 48, No. 5. pp. 313-316.
@article{a82f421b280243d8a57a6b04d2490acb,
title = "SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C",
abstract = "We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100{\%} concentration alternately and cyclically. The 100{\%}-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100{\%}-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.",
author = "Tetsuya Nishiguchi and Takeshi Noyori and Yoshiki Morikawa and Mitsuru Kekura and Hidehiko Nonaka and Shingo Ichimura",
year = "2005",
month = "8",
day = "17",
language = "English",
volume = "48",
pages = "313--316",
journal = "Journal of the Vacuum Society of Japan",
issn = "1882-2398",
publisher = "Vacuum Society of Japan",
number = "5",

}

TY - JOUR

T1 - SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C

AU - Nishiguchi, Tetsuya

AU - Noyori, Takeshi

AU - Morikawa, Yoshiki

AU - Kekura, Mitsuru

AU - Nonaka, Hidehiko

AU - Ichimura, Shingo

PY - 2005/8/17

Y1 - 2005/8/17

N2 - We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.

AB - We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.

UR - http://www.scopus.com/inward/record.url?scp=23344439220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23344439220&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:23344439220

VL - 48

SP - 313

EP - 316

JO - Journal of the Vacuum Society of Japan

JF - Journal of the Vacuum Society of Japan

SN - 1882-2398

IS - 5

ER -