SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C

Tetsuya Nishiguchi, Takeshi Noyori, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)


We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.

Original languageEnglish
Pages (from-to)313-316
Number of pages4
JournalShinku/Journal of the Vacuum Society of Japan
Issue number5
Publication statusPublished - 2005 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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