The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.
- Molecular-beam epitaxy
- Quantum dots (QDs)
- Semiconductor nanostructures
- Time-resolved photoluminescence (PL)
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering