We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.
- Gallium arsenide
- power integrated circuits
- power semiconductor devices
- wide bandgap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering