Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala

    Research output: Contribution to journalArticle

    45 Citations (Scopus)

    Abstract

    We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.

    Original languageEnglish
    Article number7851006
    Pages (from-to)856-873
    Number of pages18
    JournalIEEE Transactions on Electron Devices
    Volume64
    Issue number3
    DOIs
    Publication statusPublished - 2017 Mar 1

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    Keywords

    • Gallium arsenide
    • power integrated circuits
    • power semiconductor devices
    • wide bandgap semiconductors

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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