Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1- x- y Six Sny epitaxial layers grown on GaAs(001)

Masashi Kurosawa*, Masaya Nakata, Tianzhuo Zhan, Motohiro Tomita, Takanobu Watanabe, Osamu Nakatsuka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1-x-y Si x Sn y layers (x ≈ 0.05-0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low Sn content of 3%, the Sn atoms play a role in suppressing the thermal conductivity from 13.5 to 9.0 Wm-1 K-1 without degradation of the electrical conductivity and the Seebeck coefficient. Furthermore, a relatively high power factor (maximum: 14 μW cm-1 K-2 at room temperature) was also achieved for the Ge1-x-y Si x Sn y layers, almost the same as the Si1-x Ge x ones (maximum: 12 μW cm-1 K-2 at room temperature) grown with the same conditions. This result opens up the possibility of developing Sn-incorporated group-IV thermoelectric devices.

Original languageEnglish
Article number085502
JournalJapanese journal of applied physics
Volume61
Issue number8
DOIs
Publication statusPublished - 2022 Aug 1

Keywords

  • GeSiSn
  • MBE
  • group-IV alloy
  • thermoelectric property
  • thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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