SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures

Y. Nishida; H. Sayama; K. Ohta; H. Oda; M. Katayama; Y. Inoue; H. Morimoto; M. Inuishi

SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures

Y. Nishida, H. Sayama, K. Ohta, H. Oda, M. Katayama, Y. Inoue, H. Morimoto, M. Inuishi

Research output: Contribution to journal › Conference article

Abstract

Novel device architecture is presented, where surface channel (SC) pMOSFET and buried channel (BC) pMOSFET are fabricated on the same chip without extra process steps. High reliability for negative bias temperature instability (NBTI)/hot carrier injection (HCI) and low noise characteristics are realized by BC structure for I/O and analog circuits, and high-speed and high integration are realized by SC structure for core circuits in System-on-a Chip (SoC).

Original language	English
Pages (from-to)	869-872
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures",

abstract = "Novel device architecture is presented, where surface channel (SC) pMOSFET and buried channel (BC) pMOSFET are fabricated on the same chip without extra process steps. High reliability for negative bias temperature instability (NBTI)/hot carrier injection (HCI) and low noise characteristics are realized by BC structure for I/O and analog circuits, and high-speed and high integration are realized by SC structure for core circuits in System-on-a Chip (SoC).",

author = "Y. Nishida and H. Sayama and K. Ohta and H. Oda and M. Katayama and Y. Inoue and H. Morimoto and M. Inuishi",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "869--872",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures

AU - Nishida, Y.

AU - Sayama, H.

AU - Ohta, K.

AU - Oda, H.

AU - Katayama, M.

AU - Inoue, Y.

AU - Morimoto, H.

AU - Inuishi, M.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Novel device architecture is presented, where surface channel (SC) pMOSFET and buried channel (BC) pMOSFET are fabricated on the same chip without extra process steps. High reliability for negative bias temperature instability (NBTI)/hot carrier injection (HCI) and low noise characteristics are realized by BC structure for I/O and analog circuits, and high-speed and high integration are realized by SC structure for core circuits in System-on-a Chip (SoC).

AB - Novel device architecture is presented, where surface channel (SC) pMOSFET and buried channel (BC) pMOSFET are fabricated on the same chip without extra process steps. High reliability for negative bias temperature instability (NBTI)/hot carrier injection (HCI) and low noise characteristics are realized by BC structure for I/O and analog circuits, and high-speed and high integration are realized by SC structure for core circuits in System-on-a Chip (SoC).

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UR - http://www.scopus.com/inward/citedby.url?scp=0035714856&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035714856

SP - 869

EP - 872

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -