SOFT ERROR IN MOS DYNAMIC RAM.

Tsutomu Yoshihara, Satoshi Takano, Takao Nakano

Research output: Contribution to journalArticle

Abstract

Analytical and experimental studies are conducted on the soft errors of 64-Kbit dynamic RAMs. First, the relation between the device parameters and the critical charge is examined. If the charge distribution collected in the silicon substrate is Gaussian, the soft error rate is expressed as a complementary error function of the critical charge.

Original languageEnglish
Pages (from-to)87-93
Number of pages7
JournalElectronics & communications in Japan
Volume64
Issue number8
Publication statusPublished - 1981 Aug
Externally publishedYes

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Random access storage
Charge distribution
Silicon
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yoshihara, T., Takano, S., & Nakano, T. (1981). SOFT ERROR IN MOS DYNAMIC RAM. Electronics & communications in Japan, 64(8), 87-93.

SOFT ERROR IN MOS DYNAMIC RAM. / Yoshihara, Tsutomu; Takano, Satoshi; Nakano, Takao.

In: Electronics & communications in Japan, Vol. 64, No. 8, 08.1981, p. 87-93.

Research output: Contribution to journalArticle

Yoshihara, T, Takano, S & Nakano, T 1981, 'SOFT ERROR IN MOS DYNAMIC RAM.', Electronics & communications in Japan, vol. 64, no. 8, pp. 87-93.
Yoshihara T, Takano S, Nakano T. SOFT ERROR IN MOS DYNAMIC RAM. Electronics & communications in Japan. 1981 Aug;64(8):87-93.
Yoshihara, Tsutomu ; Takano, Satoshi ; Nakano, Takao. / SOFT ERROR IN MOS DYNAMIC RAM. In: Electronics & communications in Japan. 1981 ; Vol. 64, No. 8. pp. 87-93.
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