SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology

Katsuhiro Suma, Takahiro Tsuruda, Hideto Hidaka, Takahisa Eimori, Toshiyuki Oashi, Yasuo Yamaguchi, Toshiaki Iwamatsu, Masakazu Hirose, Fukashi Morishita, Kazutami Arimoto, Kazuyasu Fujishima, Yasuo Inoue, Tadashi Nishimura, Tsutomu Yoshihara

Research output: Contribution to journalArticle

26 Citations (Scopus)

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Engineering & Materials Science