Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Kazunori Takada, Takayoshi Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

Original languageEnglish
Title of host publicationECS Transactions
Pages349-352
Number of pages4
Volume25
Edition6
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Osada, M., Akatsuka, K., Ebina, Y., Funakubo, H., Takada, K., & Sasaki, T. (2009). Solution-based fabrication of high-k dielectrics using oxide nanosheets. In ECS Transactions (6 ed., Vol. 25, pp. 349-352) https://doi.org/10.1149/1.3206633