Solution growth and crystallinity characterization of bulk 6H-SiC

N. Yashiro*, K. Kusunoki, K. Kamei, A. Yauchi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)


The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)0878492798, 9780878492794
Publication statusPublished - 2010
Externally publishedYes
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
ISSN (Print)02555476


Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009


  • 6H-SiC
  • Bulk growth
  • Crystalline quality
  • EPD
  • Top seeded solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials


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