Abstract
The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 33-36 |
| Number of pages | 4 |
| Volume | 645-648 |
| ISBN (Print) | 0878492798, 9780878492794 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
| Event | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: 2009 Oct 11 → 2009 Oct 16 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 645-648 |
| ISSN (Print) | 02555476 |
Other
| Other | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 |
|---|---|
| Country | Germany |
| City | Nurnberg |
| Period | 09/10/11 → 09/10/16 |
Fingerprint
Keywords
- 6H-SiC
- Bulk growth
- Crystalline quality
- EPD
- Top seeded solution growth
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Solution growth and crystallinity characterization of bulk 6H-SiC. / Yashiro, N.; Kusunoki, K.; Kamei, K.; Yauchi, A.
Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 33-36 (Materials Science Forum; Vol. 645-648).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Solution growth and crystallinity characterization of bulk 6H-SiC
AU - Yashiro, N.
AU - Kusunoki, K.
AU - Kamei, K.
AU - Yauchi, A.
PY - 2010
Y1 - 2010
N2 - The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.
AB - The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.
KW - 6H-SiC
KW - Bulk growth
KW - Crystalline quality
KW - EPD
KW - Top seeded solution growth
UR - http://www.scopus.com/inward/record.url?scp=77955463372&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955463372&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.645-648.33
DO - 10.4028/www.scientific.net/MSF.645-648.33
M3 - Conference contribution
SN - 0878492798
SN - 9780878492794
VL - 645-648
T3 - Materials Science Forum
SP - 33
EP - 36
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
ER -