@inproceedings{632d41ceecdc49bda3bb2c4e4fc3e383,
title = "Solution growth and crystallinity characterization of bulk 6H-SiC",
abstract = "The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 104 and 105 cm -2, which was comparable to that of the crystal seed.",
keywords = "6H-SiC, Bulk growth, Crystalline quality, EPD, Top seeded solution growth",
author = "N. Yashiro and K. Kusunoki and K. Kamei and A. Yauchi",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.33",
language = "English",
isbn = "0878492798",
volume = "645-648",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "33--36",
booktitle = "Materials Science Forum",
note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
}