Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita, Nobuhiro Okada, Kazuhiko Kusunoki, Kazuhito Kamei

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalJournal of Crystal Growth
Volume381
DOIs
Publication statusPublished - 2013
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
temperature gradients
forced convection
Forced convection
Temperature
Buoyancy
buoyancy
Seed
seeds
convection
Substrates
Carbon
carbon
Supersaturation
Growth kinetics
supersaturation
silicon carbide
Thermal gradients
Contacts (fluid mechanics)

Keywords

  • A1. Computer simulation
  • A1. Crystal morphology
  • A1. Fluid flows
  • A2. Growth from solution
  • A2. Traveling solvent zone growth
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Kawanishi, S., Yoshikawa, T., Morita, K., Okada, N., Kusunoki, K., & Kamei, K. (2013). Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent. Journal of Crystal Growth, 381, 121-126. https://doi.org/10.1016/j.jcrysgro.2013.07.021

Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent. / Kawanishi, Sakiko; Yoshikawa, Takeshi; Morita, Kazuki; Okada, Nobuhiro; Kusunoki, Kazuhiko; Kamei, Kazuhito.

In: Journal of Crystal Growth, Vol. 381, 2013, p. 121-126.

Research output: Contribution to journalArticle

Kawanishi, S, Yoshikawa, T, Morita, K, Okada, N, Kusunoki, K & Kamei, K 2013, 'Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent', Journal of Crystal Growth, vol. 381, pp. 121-126. https://doi.org/10.1016/j.jcrysgro.2013.07.021
Kawanishi, Sakiko ; Yoshikawa, Takeshi ; Morita, Kazuki ; Okada, Nobuhiro ; Kusunoki, Kazuhiko ; Kamei, Kazuhito. / Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent. In: Journal of Crystal Growth. 2013 ; Vol. 381. pp. 121-126.
@article{363c2bf5eed741dba9306f293ebed483,
title = "Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent",
abstract = "The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.",
keywords = "A1. Computer simulation, A1. Crystal morphology, A1. Fluid flows, A2. Growth from solution, A2. Traveling solvent zone growth, B2. Semiconducting silicon compounds",
author = "Sakiko Kawanishi and Takeshi Yoshikawa and Kazuki Morita and Nobuhiro Okada and Kazuhiko Kusunoki and Kazuhito Kamei",
year = "2013",
doi = "10.1016/j.jcrysgro.2013.07.021",
language = "English",
volume = "381",
pages = "121--126",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent

AU - Kawanishi, Sakiko

AU - Yoshikawa, Takeshi

AU - Morita, Kazuki

AU - Okada, Nobuhiro

AU - Kusunoki, Kazuhiko

AU - Kamei, Kazuhito

PY - 2013

Y1 - 2013

N2 - The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.

AB - The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.

KW - A1. Computer simulation

KW - A1. Crystal morphology

KW - A1. Fluid flows

KW - A2. Growth from solution

KW - A2. Traveling solvent zone growth

KW - B2. Semiconducting silicon compounds

UR - http://www.scopus.com/inward/record.url?scp=84882390606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882390606&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.07.021

DO - 10.1016/j.jcrysgro.2013.07.021

M3 - Article

VL - 381

SP - 121

EP - 126

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -