Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere

K. Kusunoki, K. Kamei, N. Yashiro, T. Tanaka, A. Yauchi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1845-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)si by TEM, molten KOH etching and precise XRD measurement.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

atmospheres
Epitaxial layers
Growth temperature
Molten materials
Etching
Nitrogen
Gases
Transmission electron microscopy
etching
nitrogen
transmission electron microscopy
gases
temperature

Keywords

  • 3C-SiC
  • 6H-SiC
  • Nitrogen
  • Top seeded solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kusunoki, K., Kamei, K., Yashiro, N., Tanaka, T., & Yauchi, A. (2009). Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere. Materials Science Forum, 600-603, 187-190. https://doi.org/10.4028/3-908453-11-9.187

Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere. / Kusunoki, K.; Kamei, K.; Yashiro, N.; Tanaka, T.; Yauchi, A.

In: Materials Science Forum, Vol. 600-603, 2009, p. 187-190.

Research output: Contribution to journalArticle

Kusunoki, K, Kamei, K, Yashiro, N, Tanaka, T & Yauchi, A 2009, 'Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere', Materials Science Forum, vol. 600-603, pp. 187-190. https://doi.org/10.4028/3-908453-11-9.187
Kusunoki, K. ; Kamei, K. ; Yashiro, N. ; Tanaka, T. ; Yauchi, A. / Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 187-190.
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