Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere

K. Kusunoki, K. Kamei, N. Yashiro, T. Tanaka, A. Yauchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1845-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)si by TEM, molten KOH etching and precise XRD measurement.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009
Externally publishedYes

Keywords

  • 3C-SiC
  • 6H-SiC
  • Nitrogen
  • Top seeded solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Fingerprint Dive into the research topics of 'Solution growth of 3C-SiC on 6H-SiC using Si solvent under N<sub>2</sub>-He atmosphere'. Together they form a unique fingerprint.

  • Cite this

    Kusunoki, K., Kamei, K., Yashiro, N., Tanaka, T., & Yauchi, A. (2009). Solution growth of 3C-SiC on 6H-SiC using Si solvent under N2-He atmosphere. Materials Science Forum, 600-603, 187-190. https://doi.org/10.4028/3-908453-11-9.187