Solution growth of 3C-SiC single crystals by cold crucible technique

T. Tanaka, N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi

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1 Citation (Scopus)


We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 5-106/cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 2009
Externally publishedYes


  • 3C-SiC
  • 6H-SiC
  • Cold crucible
  • Numerical analysis
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Tanaka, T., Yashiro, N., Kusunoki, K., Kamei, K., & Yauchi, A. (2009). Solution growth of 3C-SiC single crystals by cold crucible technique. Materials Science Forum, 600-603, 191-194.