TY - JOUR
T1 - Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen
AU - Kamei, K.
AU - Shirai, Y.
AU - Tanaka, T.
AU - Okada, N.
AU - Yauchi, A.
AU - Amano, H.
PY - 2007
Y1 - 2007
N2 - We have grown thick AlN epilayers on SiC substrates by a new solution growth technique using Cu solvents under atmospheric pressure nitrogen. By using growth apparatus based on CZ growth system with inductive heating, we have grown AlN single crystalline layers of which thickness were more than 200 μm on (4H,6H)-SiC substrates at relatively low growth temperatures such as 1600 °C-1800 °C. Inch-size self standing AlN crystals were also prepared by removing the SiC substrate. TEM observation, ω-scan XRD measurement and cathode luminescence spectroscopy were conducted to characterize the crystallinity of the obtained AlN layers.
AB - We have grown thick AlN epilayers on SiC substrates by a new solution growth technique using Cu solvents under atmospheric pressure nitrogen. By using growth apparatus based on CZ growth system with inductive heating, we have grown AlN single crystalline layers of which thickness were more than 200 μm on (4H,6H)-SiC substrates at relatively low growth temperatures such as 1600 °C-1800 °C. Inch-size self standing AlN crystals were also prepared by removing the SiC substrate. TEM observation, ω-scan XRD measurement and cathode luminescence spectroscopy were conducted to characterize the crystallinity of the obtained AlN layers.
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U2 - 10.1002/pssc.200674718
DO - 10.1002/pssc.200674718
M3 - Article
AN - SCOPUS:49749087961
VL - 4
SP - 2211
EP - 2214
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 7
ER -