Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen

K. Kamei, Y. Shirai, T. Tanaka, N. Okada, A. Yauchi, H. Amano

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We have grown thick AlN epilayers on SiC substrates by a new solution growth technique using Cu solvents under atmospheric pressure nitrogen. By using growth apparatus based on CZ growth system with inductive heating, we have grown AlN single crystalline layers of which thickness were more than 200 μm on (4H,6H)-SiC substrates at relatively low growth temperatures such as 1600 °C-1800 °C. Inch-size self standing AlN crystals were also prepared by removing the SiC substrate. TEM observation, ω-scan XRD measurement and cathode luminescence spectroscopy were conducted to characterize the crystallinity of the obtained AlN layers.

Original languageEnglish
Pages (from-to)2211-2214
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this