Solution growth of off-axis 4H-SiC for power device application

Ryo Hattori; Kazuhiko Kusunoki; Nobuyuki Yashiro; Kazuhito Kamei

doi:10.4028/3-908453-11-9.179

Solution growth of off-axis 4H-SiC for power device application

Ryo Hattori^*, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	Materials Science Forum
Volume	600-603
DOIs	https://doi.org/10.4028/3-908453-11-9.179
Publication status	Published - 2009
Externally published	Yes

Keywords

BPD
EPD
Off-axis
SiC
Solution growth
TED

ASJC Scopus subject areas

Mechanical Engineering
Mechanics of Materials
Materials Science(all)
Condensed Matter Physics

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10.4028/3-908453-11-9.179

Cite this

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abstract = "Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.",

keywords = "BPD, EPD, Off-axis, SiC, Solution growth, TED",

author = "Ryo Hattori and Kazuhiko Kusunoki and Nobuyuki Yashiro and Kazuhito Kamei",

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pages = "179--182",

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AU - Hattori, Ryo

AU - Kusunoki, Kazuhiko

AU - Yashiro, Nobuyuki

AU - Kamei, Kazuhito

PY - 2009

Y1 - 2009

N2 - Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

AB - Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

KW - BPD

KW - EPD

KW - Off-axis

KW - SiC

KW - Solution growth

KW - TED

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JO - Materials Science Forum

JF - Materials Science Forum

ER -

Solution growth of off-axis 4H-SiC for power device application

Abstract

Keywords

ASJC Scopus subject areas

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