Solution growth of off-axis 4H-SiC for power device application

Ryo Hattori, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

Buffer layers
buffers
Chemical vapor deposition
Sublimation
Epitaxial layers
transferred electron devices
vapor deposition
Substrates
Dislocations (crystals)
Epitaxial growth
Molten materials
sublimation
insertion
propagation

Keywords

  • BPD
  • EPD
  • Off-axis
  • SiC
  • Solution growth
  • TED

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Solution growth of off-axis 4H-SiC for power device application. / Hattori, Ryo; Kusunoki, Kazuhiko; Yashiro, Nobuyuki; Kamei, Kazuhito.

In: Materials Science Forum, Vol. 600-603, 2009, p. 179-182.

Research output: Contribution to journalArticle

Hattori, R, Kusunoki, K, Yashiro, N & Kamei, K 2009, 'Solution growth of off-axis 4H-SiC for power device application', Materials Science Forum, vol. 600-603, pp. 179-182. https://doi.org/10.4028/3-908453-11-9.179
Hattori, Ryo ; Kusunoki, Kazuhiko ; Yashiro, Nobuyuki ; Kamei, Kazuhito. / Solution growth of off-axis 4H-SiC for power device application. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 179-182.
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