Solution growth of off-axis 4H-SiC for power device application

Ryo Hattori*, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 2009
Externally publishedYes


  • BPD
  • EPD
  • Off-axis
  • SiC
  • Solution growth
  • TED

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics


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