Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique

K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, K. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

33 Citations (Scopus)

Abstract

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages119-122
Number of pages4
Volume527-529
EditionPART 1
Publication statusPublished - 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

Fingerprint

Crucibles
Crystallization
Crystals
Graphite
Surface morphology
Carbon
Single crystals

Keywords

  • 6H-SiC
  • Accelerated crucible rotation technique
  • Numerical analysis
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kusunoki, K., Kamei, K., Okada, N., Yashiro, N., Yauchi, A., Ujihara, T., & Nakajima, K. (2006). Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique. In Materials Science Forum (PART 1 ed., Vol. 527-529, pp. 119-122). (Materials Science Forum; Vol. 527-529, No. PART 1).

Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique. / Kusunoki, K.; Kamei, K.; Okada, N.; Yashiro, N.; Yauchi, A.; Ujihara, T.; Nakajima, K.

Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. p. 119-122 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kusunoki, K, Kamei, K, Okada, N, Yashiro, N, Yauchi, A, Ujihara, T & Nakajima, K 2006, Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique. in Materials Science Forum. PART 1 edn, vol. 527-529, Materials Science Forum, no. PART 1, vol. 527-529, pp. 119-122, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 05/9/18.
Kusunoki K, Kamei K, Okada N, Yashiro N, Yauchi A, Ujihara T et al. Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique. In Materials Science Forum. PART 1 ed. Vol. 527-529. 2006. p. 119-122. (Materials Science Forum; PART 1).
Kusunoki, K. ; Kamei, K. ; Okada, N. ; Yashiro, N. ; Yauchi, A. ; Ujihara, T. ; Nakajima, K. / Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique. Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. pp. 119-122 (Materials Science Forum; PART 1).
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