Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt

Kazuhito Kamei*, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Nobuhiro Okada, Tsutomu Tanaka, Akihiro Yauchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.

Original languageEnglish
Pages (from-to)855-858
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15
Externally publishedYes

Keywords

  • A1. Crystal morphology
  • A2. Top seeded solution growth
  • A3. Liquid phase epitaxy
  • B1. Inorganic compounds
  • B2. Semiconducting silicon compounds
  • B3. Bipolar transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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