Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt

Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Nobuhiro Okada, Tsutomu Tanaka, Akihiro Yauchi

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

We performed the top seeded solution growth of 6H; 4H-SiC single crystals from Si-Ti-C ternary solution. The 5 mm thick 2 in diameter 6H-SiC was grown by optimizing the growth condition such as temperature distribution in the crucible. The obtained 6H-SiC self-standing crystal exhibited homogeneous green color without cracks and inclusions. We also investigated the LPE growth of 4H-SiC on 8° off-axed pvt-SiC substrate aiming at the application to the electronic devices. The LPE layer drastically reduced the density of basal-plane dislocation, which significantly degrades the device performance, although the total dislocation density remained unchanged. The ω-scan rocking curves using 000n reflection for both 6H-SiC wafer and 4H-SiC LPE layer showed the rather small FWHM of less than 20 arcsec indicating the excellent crystallinity of the solution grown SiC.

Original languageEnglish
Pages (from-to)855-858
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15
Externally publishedYes

Fingerprint

Crystalline materials
Crucibles
crucibles
Full width at half maximum
crystallinity
Temperature distribution
temperature distribution
cracks
Single crystals
wafers
inclusions
Color
Cracks
color
Crystals
single crystals
Substrates
curves
electronics
crystals

Keywords

  • A1. Crystal morphology
  • A2. Top seeded solution growth
  • A3. Liquid phase epitaxy
  • B1. Inorganic compounds
  • B2. Semiconducting silicon compounds
  • B3. Bipolar transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Kamei, K., Kusunoki, K., Yashiro, N., Okada, N., Tanaka, T., & Yauchi, A. (2009). Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt. Journal of Crystal Growth, 311(3), 855-858. https://doi.org/10.1016/j.jcrysgro.2008.09.142

Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt. / Kamei, Kazuhito; Kusunoki, Kazuhiko; Yashiro, Nobuyoshi; Okada, Nobuhiro; Tanaka, Tsutomu; Yauchi, Akihiro.

In: Journal of Crystal Growth, Vol. 311, No. 3, 15.01.2009, p. 855-858.

Research output: Contribution to journalArticle

Kamei, K, Kusunoki, K, Yashiro, N, Okada, N, Tanaka, T & Yauchi, A 2009, 'Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt', Journal of Crystal Growth, vol. 311, no. 3, pp. 855-858. https://doi.org/10.1016/j.jcrysgro.2008.09.142
Kamei K, Kusunoki K, Yashiro N, Okada N, Tanaka T, Yauchi A. Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt. Journal of Crystal Growth. 2009 Jan 15;311(3):855-858. https://doi.org/10.1016/j.jcrysgro.2008.09.142
Kamei, Kazuhito ; Kusunoki, Kazuhiko ; Yashiro, Nobuyoshi ; Okada, Nobuhiro ; Tanaka, Tsutomu ; Yauchi, Akihiro. / Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 3. pp. 855-858.
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