Abstract
A long-term growth of high-quality 4H-SiC single crystals by a top-seeded solution growth method using a Si-Cr-based melt was investigated. A new growth technique called "solution growth on concave surface" (SGCS) was developed to help prevent solvent inclusions. The concave shape of the growth surface was achieved by controlling the meniscus height, which enhances the step provision from the periphery to the center. In contrast, under the growth surface, the solution flows from the center to the periphery through convection by inductive heating. The opposite directions of the step flow and solution flow during solution growth create a smooth surface without solvent inclusions. SGCS was used to successfully grow a 1-in. diameter 4H-SiC crystal with a thickness of 30 mm, which is the thickest reported for a solution growth technique, and 1.7-in. diameter high-quality wafers without solvent inclusions were obtained. Schottky barrier diodes were fabricated on 4H-SiC substrates grown by SGCS, which demonstrated breakdown voltages in excess of the 1.2 kV required for hybrid vehicle applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1256-1260 |
| Number of pages | 5 |
| Journal | Crystal Growth and Design |
| Volume | 16 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2016 Mar 2 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
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Solution Growth on Concave Surface of 4H-SiC Crystal. / Daikoku, Hironori; Kado, Motohisa; Seki, Akinori; Sato, Kazuaki; Bessho, Takeshi; Kusunoki, Kazuhiko; Kaidou, Hiroshi; Kishida, Yutaka; Moriguchi, Koji; Kamei, Kazuhito.
In: Crystal Growth and Design, Vol. 16, No. 3, 02.03.2016, p. 1256-1260.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Solution Growth on Concave Surface of 4H-SiC Crystal
AU - Daikoku, Hironori
AU - Kado, Motohisa
AU - Seki, Akinori
AU - Sato, Kazuaki
AU - Bessho, Takeshi
AU - Kusunoki, Kazuhiko
AU - Kaidou, Hiroshi
AU - Kishida, Yutaka
AU - Moriguchi, Koji
AU - Kamei, Kazuhito
PY - 2016/3/2
Y1 - 2016/3/2
N2 - A long-term growth of high-quality 4H-SiC single crystals by a top-seeded solution growth method using a Si-Cr-based melt was investigated. A new growth technique called "solution growth on concave surface" (SGCS) was developed to help prevent solvent inclusions. The concave shape of the growth surface was achieved by controlling the meniscus height, which enhances the step provision from the periphery to the center. In contrast, under the growth surface, the solution flows from the center to the periphery through convection by inductive heating. The opposite directions of the step flow and solution flow during solution growth create a smooth surface without solvent inclusions. SGCS was used to successfully grow a 1-in. diameter 4H-SiC crystal with a thickness of 30 mm, which is the thickest reported for a solution growth technique, and 1.7-in. diameter high-quality wafers without solvent inclusions were obtained. Schottky barrier diodes were fabricated on 4H-SiC substrates grown by SGCS, which demonstrated breakdown voltages in excess of the 1.2 kV required for hybrid vehicle applications.
AB - A long-term growth of high-quality 4H-SiC single crystals by a top-seeded solution growth method using a Si-Cr-based melt was investigated. A new growth technique called "solution growth on concave surface" (SGCS) was developed to help prevent solvent inclusions. The concave shape of the growth surface was achieved by controlling the meniscus height, which enhances the step provision from the periphery to the center. In contrast, under the growth surface, the solution flows from the center to the periphery through convection by inductive heating. The opposite directions of the step flow and solution flow during solution growth create a smooth surface without solvent inclusions. SGCS was used to successfully grow a 1-in. diameter 4H-SiC crystal with a thickness of 30 mm, which is the thickest reported for a solution growth technique, and 1.7-in. diameter high-quality wafers without solvent inclusions were obtained. Schottky barrier diodes were fabricated on 4H-SiC substrates grown by SGCS, which demonstrated breakdown voltages in excess of the 1.2 kV required for hybrid vehicle applications.
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UR - http://www.scopus.com/inward/citedby.url?scp=84959518777&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.5b01265
DO - 10.1021/acs.cgd.5b01265
M3 - Article
AN - SCOPUS:84959518777
VL - 16
SP - 1256
EP - 1260
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 3
ER -