Solution-processed fabrication of single-walled carbon nanotube field effect transistors

M. Shiraishi, T. Takenobu, Y. Iwasa, T. Iwai, H. Kataura, M. Ata

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalFullerenes Nanotubes and Carbon Nanostructures
Volume13
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Carbon nanotube field effect transistors
Single-walled carbon nanotubes (SWCN)
Field effect transistors
field effect transistors
carbon nanotubes
Fabrication
fabrication
Thin films
thin films
bundles
liquid phases
routes
methodology
Liquids
Temperature

Keywords

  • Field effect transistor
  • Molecular electronic device
  • Single-walled carbon nanotubes
  • Thin films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Materials Science(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Solution-processed fabrication of single-walled carbon nanotube field effect transistors. / Shiraishi, M.; Takenobu, T.; Iwasa, Y.; Iwai, T.; Kataura, H.; Ata, M.

In: Fullerenes Nanotubes and Carbon Nanostructures, Vol. 13, No. SUPPL. 1, 2005, p. 485-489.

Research output: Contribution to journal › Article

Shiraishi, M, Takenobu, T, Iwasa, Y, Iwai, T, Kataura, H & Ata, M 2005, 'Solution-processed fabrication of single-walled carbon nanotube field effect transistors', Fullerenes Nanotubes and Carbon Nanostructures, vol. 13, no. SUPPL. 1, pp. 485-489. https://doi.org/10.1081/FST-200039467
Shiraishi M, Takenobu T, Iwasa Y, Iwai T, Kataura H, Ata M. Solution-processed fabrication of single-walled carbon nanotube field effect transistors. Fullerenes Nanotubes and Carbon Nanostructures. 2005;13(SUPPL. 1):485-489. https://doi.org/10.1081/FST-200039467
Shiraishi, M. ; Takenobu, T. ; Iwasa, Y. ; Iwai, T. ; Kataura, H. ; Ata, M. / Solution-processed fabrication of single-walled carbon nanotube field effect transistors. In: Fullerenes Nanotubes and Carbon Nanostructures. 2005 ; Vol. 13, No. SUPPL. 1. pp. 485-489.
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