Solution-processed fabrication of single-walled carbon nanotube field effect transistors

M. Shiraishi; T. Takenobu; Y. Iwasa; T. Iwai; H. Kataura; M. Ata

doi:10.1081/FST-200039467

Solution-processed fabrication of single-walled carbon nanotube field effect transistors

M. Shiraishi, T. Takenobu, Y. Iwasa, T. Iwai, H. Kataura, M. Ata

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.

Original language	English
Pages (from-to)	485-489
Number of pages	5
Journal	Fullerenes Nanotubes and Carbon Nanostructures
Volume	13
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1081/FST-200039467
Publication status	Published - 2005
Externally published	Yes

Keywords

Field effect transistor
Molecular electronic device
Single-walled carbon nanotubes
Thin films

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Materials Science(all)
Atomic and Molecular Physics, and Optics

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10.1081/FST-200039467

Cite this

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abstract = "We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.",

keywords = "Field effect transistor, Molecular electronic device, Single-walled carbon nanotubes, Thin films",

author = "M. Shiraishi and T. Takenobu and Y. Iwasa and T. Iwai and H. Kataura and M. Ata",

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T1 - Solution-processed fabrication of single-walled carbon nanotube field effect transistors

AU - Shiraishi, M.

AU - Takenobu, T.

AU - Iwasa, Y.

AU - Iwai, T.

AU - Kataura, H.

AU - Ata, M.

PY - 2005

Y1 - 2005

N2 - We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.

AB - We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.

KW - Field effect transistor

KW - Molecular electronic device

KW - Single-walled carbon nanotubes

KW - Thin films

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JO - Fullerenes Nanotubes and Carbon Nanostructures

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SN - 1536-383X

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ER -

Solution-processed fabrication of single-walled carbon nanotube field effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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