Abstract
We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 485-489 |
| Number of pages | 5 |
| Journal | Fullerenes Nanotubes and Carbon Nanostructures |
| Volume | 13 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2005 |
| Externally published | Yes |
Keywords
- Field effect transistor
- Molecular electronic device
- Single-walled carbon nanotubes
- Thin films
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Materials Science(all)
- Atomic and Molecular Physics, and Optics
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Cite this
Shiraishi, M., Takenobu, T., Iwasa, Y., Iwai, T., Kataura, H., & Ata, M. (2005). Solution-processed fabrication of single-walled carbon nanotube field effect transistors. Fullerenes Nanotubes and Carbon Nanostructures, 13(SUPPL. 1), 485-489. https://doi.org/10.1081/FST-200039467