Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages30.1.1-30.1.4
    Volume2015-February
    EditionFebruary
    DOIs
    Publication statusPublished - 2015 Feb 20
    Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
    Duration: 2014 Dec 152014 Dec 17

    Other

    Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
    CountryUnited States
    CitySan Francisco
    Period14/12/1514/12/17

    Fingerprint

    Telegraph
    statistical analysis
    Nanowires
    Molecular dynamics
    Statistical methods
    Transistors
    nanowires
    transistors
    Doping (additives)
    molecular dynamics
    Computer simulation
    simulation
    Parallel processing systems
    causes
    Graphics processing unit

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Suzuki, A., Kamioka, T., Kamakura, Y., Ohmori, K., Yamada, K., & Watanabe, T. (2015). Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. In Technical Digest - International Electron Devices Meeting, IEDM (February ed., Vol. 2015-February, pp. 30.1.1-30.1.4). [7047139] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047139

    Source-induced RDF overwhelms RTN in nanowire transistor : Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. / Suzuki, Akito; Kamioka, Takefumi; Kamakura, Yoshinari; Ohmori, Kenji; Yamada, Keisaku; Watanabe, Takanobu.

    Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 30.1.1-30.1.4 7047139.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Suzuki, A, Kamioka, T, Kamakura, Y, Ohmori, K, Yamada, K & Watanabe, T 2015, Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. in Technical Digest - International Electron Devices Meeting, IEDM. February edn, vol. 2015-February, 7047139, Institute of Electrical and Electronics Engineers Inc., pp. 30.1.1-30.1.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047139
    Suzuki A, Kamioka T, Kamakura Y, Ohmori K, Yamada K, Watanabe T. Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. In Technical Digest - International Electron Devices Meeting, IEDM. February ed. Vol. 2015-February. Institute of Electrical and Electronics Engineers Inc. 2015. p. 30.1.1-30.1.4. 7047139 https://doi.org/10.1109/IEDM.2014.7047139
    Suzuki, Akito ; Kamioka, Takefumi ; Kamakura, Yoshinari ; Ohmori, Kenji ; Yamada, Keisaku ; Watanabe, Takanobu. / Source-induced RDF overwhelms RTN in nanowire transistor : Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 30.1.1-30.1.4
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