Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages30.1.1-30.1.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Suzuki, A., Kamioka, T., Kamakura, Y., Ohmori, K., Yamada, K., & Watanabe, T. (2015). Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 30.1.1-30.1.4). [7047139] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047139