Spatial distribution of defects in high-purity silica glasses

Ryoichi Tohmon, Akihiro Ikeda, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

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    Abstract

    The spatial distribution of defects and impurities in a variety of high-purity silica glass manufactured by different methods are studied. The defects investigated include those found in the as-manufactured glass (oxygen vacancy and peroxy linkage), as well as those induced by ionizing radiation or ultraviolet light (E' center and oxygen hole centers). A significant difference is observed in the distribution between silica manufactured by different methods. Furthermore, the defects induced by ionizing radiation or ultraviolet light have a spatial distribution relative to the geometry of the as-manufactured boule, suggesting that these defects arise primarily from the activation of preexisting precursors.

    Original languageEnglish
    Pages (from-to)1302-1306
    Number of pages5
    JournalJournal of Applied Physics
    Volume67
    Issue number3
    DOIs
    Publication statusPublished - 1990

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Tohmon, R., Ikeda, A., Shimogaichi, Y., Munekuni, S., Ohki, Y., Nagasawa, K., & Hama, Y. (1990). Spatial distribution of defects in high-purity silica glasses. Journal of Applied Physics, 67(3), 1302-1306. https://doi.org/10.1063/1.345681