Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

Kazuhiro Marumoto, Shin Ichi Kuroda, Taishi Takenobu, Yoshihiro Iwasa

Research output: Contribution to journalArticle

129 Citations (Scopus)

Abstract

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

Original languageEnglish
Article number256603
JournalPhysical Review Letters
Volume97
Issue number25
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

electron paramagnetic resonance
wave functions
hyperfine structure
density distribution
molecules
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance. / Marumoto, Kazuhiro; Kuroda, Shin Ichi; Takenobu, Taishi; Iwasa, Yoshihiro.

In: Physical Review Letters, Vol. 97, No. 25, 256603, 2006.

Research output: Contribution to journalArticle

Marumoto, Kazuhiro ; Kuroda, Shin Ichi ; Takenobu, Taishi ; Iwasa, Yoshihiro. / Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance. In: Physical Review Letters. 2006 ; Vol. 97, No. 25.
@article{72ff83ffa7c749e2b1009f3b07fb3311,
title = "Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance",
abstract = "An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.",
author = "Kazuhiro Marumoto and Kuroda, {Shin Ichi} and Taishi Takenobu and Yoshihiro Iwasa",
year = "2006",
doi = "10.1103/PhysRevLett.97.256603",
language = "English",
volume = "97",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "25",

}

TY - JOUR

T1 - Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

AU - Marumoto, Kazuhiro

AU - Kuroda, Shin Ichi

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

PY - 2006

Y1 - 2006

N2 - An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

AB - An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

UR - http://www.scopus.com/inward/record.url?scp=33845794407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845794407&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.97.256603

DO - 10.1103/PhysRevLett.97.256603

M3 - Article

AN - SCOPUS:33845794407

VL - 97

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 25

M1 - 256603

ER -