Abstract
Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.
| Original language | English |
|---|---|
| Title of host publication | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 85-88 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479969111 |
| DOIs | |
| Publication status | Published - 2015 Mar 18 |
| Externally published | Yes |
| Event | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: 2015 Jan 26 → 2015 Jan 28 |
Other
| Other | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 |
|---|---|
| Country | Italy |
| City | Bologna |
| Period | 15/1/26 → 15/1/28 |
Fingerprint
Keywords
- bilayer
- CVD
- Fermi level
- FTIR
- graphene
- KPFM
- large-scale devices
- multilayer
- substrate
- variability
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Spatial variability in large area single and few-layer CVD graphene. / Moldovan, Clara F.; Gajewski, Krzysztof; Tamagnone, Michele; Weatherup, Robert S.; Sugime, Hisashi; Szumska, Anna; Vitale, Wolfgang A.; Robertson, John; Ionescu, Adrian M.
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 85-88 7063779.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Spatial variability in large area single and few-layer CVD graphene
AU - Moldovan, Clara F.
AU - Gajewski, Krzysztof
AU - Tamagnone, Michele
AU - Weatherup, Robert S.
AU - Sugime, Hisashi
AU - Szumska, Anna
AU - Vitale, Wolfgang A.
AU - Robertson, John
AU - Ionescu, Adrian M.
PY - 2015/3/18
Y1 - 2015/3/18
N2 - Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.
AB - Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.
KW - bilayer
KW - CVD
KW - Fermi level
KW - FTIR
KW - graphene
KW - KPFM
KW - large-scale devices
KW - multilayer
KW - substrate
KW - variability
UR - http://www.scopus.com/inward/record.url?scp=84926443662&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84926443662&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2015.7063779
DO - 10.1109/ULIS.2015.7063779
M3 - Conference contribution
SP - 85
EP - 88
BT - EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
PB - Institute of Electrical and Electronics Engineers Inc.
ER -