Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan, Krzysztof Gajewski, Michele Tamagnone, Robert S. Weatherup, Hisashi Sugime, Anna Szumska, Wolfgang A. Vitale, John Robertson, Adrian M. Ionescu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

Original languageEnglish
Title of host publicationEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-88
Number of pages4
ISBN (Electronic)9781479969111
DOIs
Publication statusPublished - 2015 Mar 18
Externally publishedYes
Event2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
Duration: 2015 Jan 262015 Jan 28

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
CountryItaly
CityBologna
Period15/1/2615/1/28

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Keywords

  • bilayer
  • CVD
  • Fermi level
  • FTIR
  • graphene
  • KPFM
  • large-scale devices
  • multilayer
  • substrate
  • variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Moldovan, C. F., Gajewski, K., Tamagnone, M., Weatherup, R. S., Sugime, H., Szumska, A., Vitale, W. A., Robertson, J., & Ionescu, A. M. (2015). Spatial variability in large area single and few-layer CVD graphene. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 85-88). [7063779] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063779