Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan; Krzysztof Gajewski; Michele Tamagnone; Robert S. Weatherup; Hisashi Sugime; Anna Szumska; Wolfgang A. Vitale; John Robertson; Adrian M. Ionescu

doi:10.1109/ULIS.2015.7063779

Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan, Krzysztof Gajewski, Michele Tamagnone, Robert S. Weatherup, Hisashi Sugime, Anna Szumska, Wolfgang A. Vitale, John Robertson, Adrian M. Ionescu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

Original language	English
Title of host publication	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	85-88
Number of pages	4
ISBN (Electronic)	9781479969111
DOIs	https://doi.org/10.1109/ULIS.2015.7063779
Publication status	Published - 2015 Mar 18
Externally published	Yes
Event	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: 2015 Jan 26 → 2015 Jan 28

Publication series

Name	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Other

Other	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Country/Territory	Italy
City	Bologna
Period	15/1/26 → 15/1/28

Keywords

CVD
FTIR
Fermi level
KPFM
bilayer
graphene
large-scale devices
multilayer
substrate
variability

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ULIS.2015.7063779

Cite this

Moldovan, C. F., Gajewski, K., Tamagnone, M., Weatherup, R. S., Sugime, H., Szumska, A., Vitale, W. A., Robertson, J., & Ionescu, A. M. (2015). Spatial variability in large area single and few-layer CVD graphene. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 85-88). [7063779] (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063779

Spatial variability in large area single and few-layer CVD graphene. / Moldovan, Clara F.; Gajewski, Krzysztof; Tamagnone, Michele et al.

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 85-88 7063779 (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moldovan, CF, Gajewski, K, Tamagnone, M, Weatherup, RS, Sugime, H, Szumska, A, Vitale, WA, Robertson, J & Ionescu, AM 2015, Spatial variability in large area single and few-layer CVD graphene. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063779, EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., pp. 85-88, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 15/1/26. https://doi.org/10.1109/ULIS.2015.7063779

Moldovan CF, Gajewski K, Tamagnone M, Weatherup RS, Sugime H, Szumska A et al. Spatial variability in large area single and few-layer CVD graphene. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 85-88. 7063779. (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon). doi: 10.1109/ULIS.2015.7063779

Moldovan, Clara F. ; Gajewski, Krzysztof ; Tamagnone, Michele et al. / Spatial variability in large area single and few-layer CVD graphene. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 85-88 (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon).

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AU - Sugime, Hisashi

AU - Szumska, Anna

AU - Vitale, Wolfgang A.

AU - Robertson, John

AU - Ionescu, Adrian M.

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AB - Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

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Spatial variability in large area single and few-layer CVD graphene

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Keywords

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