Abstract
Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.
Original language | English |
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Title of host publication | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 85-88 |
Number of pages | 4 |
ISBN (Electronic) | 9781479969111 |
DOIs | |
Publication status | Published - 2015 Mar 18 |
Externally published | Yes |
Event | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: 2015 Jan 26 → 2015 Jan 28 |
Other
Other | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 |
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Country | Italy |
City | Bologna |
Period | 15/1/26 → 15/1/28 |
Keywords
- bilayer
- CVD
- Fermi level
- FTIR
- graphene
- KPFM
- large-scale devices
- multilayer
- substrate
- variability
ASJC Scopus subject areas
- Electrical and Electronic Engineering