Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan; Krzysztof Gajewski; Michele Tamagnone; Robert S. Weatherup; Hisashi Sugime; Anna Szumska; Wolfgang A. Vitale; John Robertson; Adrian M. Ionescu

doi:10.1109/ULIS.2015.7063779

Spatial variability in large area single and few-layer CVD graphene

Clara F. Moldovan, Krzysztof Gajewski, Michele Tamagnone, Robert S. Weatherup, Hisashi Sugime, Anna Szumska, Wolfgang A. Vitale, John Robertson, Adrian M. Ionescu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

Original language	English
Title of host publication	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	85-88
Number of pages	4
ISBN (Electronic)	9781479969111
DOIs	https://doi.org/10.1109/ULIS.2015.7063779
Publication status	Published - 2015 Mar 18
Externally published	Yes
Event	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: 2015 Jan 26 → 2015 Jan 28

Other

Other	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Country	Italy
City	Bologna
Period	15/1/26 → 15/1/28

Keywords

bilayer
CVD
Fermi level
FTIR
graphene
KPFM
large-scale devices
multilayer
substrate
variability

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ULIS.2015.7063779

Fingerprint Dive into the research topics of 'Spatial variability in large area single and few-layer CVD graphene'. Together they form a unique fingerprint.

Cite this

Moldovan, C. F., Gajewski, K., Tamagnone, M., Weatherup, R. S., Sugime, H., Szumska, A., Vitale, W. A., Robertson, J., & Ionescu, A. M. (2015). Spatial variability in large area single and few-layer CVD graphene. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 85-88). [7063779] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063779

Spatial variability in large area single and few-layer CVD graphene. / Moldovan, Clara F.; Gajewski, Krzysztof; Tamagnone, Michele; Weatherup, Robert S.; Sugime, Hisashi; Szumska, Anna; Vitale, Wolfgang A.; Robertson, John; Ionescu, Adrian M.

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 85-88 7063779.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moldovan, CF, Gajewski, K, Tamagnone, M, Weatherup, RS, Sugime, H, Szumska, A, Vitale, WA, Robertson, J & Ionescu, AM 2015, Spatial variability in large area single and few-layer CVD graphene. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063779, Institute of Electrical and Electronics Engineers Inc., pp. 85-88, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 15/1/26. https://doi.org/10.1109/ULIS.2015.7063779

Moldovan CF, Gajewski K, Tamagnone M, Weatherup RS, Sugime H, Szumska A et al. Spatial variability in large area single and few-layer CVD graphene. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 85-88. 7063779 https://doi.org/10.1109/ULIS.2015.7063779

Moldovan, Clara F. ; Gajewski, Krzysztof ; Tamagnone, Michele ; Weatherup, Robert S. ; Sugime, Hisashi ; Szumska, Anna ; Vitale, Wolfgang A. ; Robertson, John ; Ionescu, Adrian M. / Spatial variability in large area single and few-layer CVD graphene. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 85-88

@inproceedings{a2ebb561b6454b6fadb7866d2b4c7514,

title = "Spatial variability in large area single and few-layer CVD graphene",

abstract = "Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on S{\`I}O2 and AI2O3 were fabricated and analyzed.",

keywords = "bilayer, CVD, Fermi level, FTIR, graphene, KPFM, large-scale devices, multilayer, substrate, variability",

author = "Moldovan, {Clara F.} and Krzysztof Gajewski and Michele Tamagnone and Weatherup, {Robert S.} and Hisashi Sugime and Anna Szumska and Vitale, {Wolfgang A.} and John Robertson and Ionescu, {Adrian M.}",

year = "2015",

month = mar,

day = "18",

doi = "10.1109/ULIS.2015.7063779",

language = "English",

pages = "85--88",

booktitle = "EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 ; Conference date: 26-01-2015 Through 28-01-2015",

}

TY - GEN

T1 - Spatial variability in large area single and few-layer CVD graphene

AU - Moldovan, Clara F.

AU - Gajewski, Krzysztof

AU - Tamagnone, Michele

AU - Weatherup, Robert S.

AU - Sugime, Hisashi

AU - Szumska, Anna

AU - Vitale, Wolfgang A.

AU - Robertson, John

AU - Ionescu, Adrian M.

PY - 2015/3/18

Y1 - 2015/3/18

N2 - Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

AB - Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SÌO2 and AI2O3 were fabricated and analyzed.

KW - bilayer

KW - CVD

KW - Fermi level

KW - FTIR

KW - graphene

KW - KPFM

KW - large-scale devices

KW - multilayer

KW - substrate

KW - variability

UR - http://www.scopus.com/inward/record.url?scp=84926443662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926443662&partnerID=8YFLogxK

U2 - 10.1109/ULIS.2015.7063779

DO - 10.1109/ULIS.2015.7063779

M3 - Conference contribution

AN - SCOPUS:84926443662

SP - 85

EP - 88

BT - EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015

Y2 - 26 January 2015 through 28 January 2015

ER -