Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ(B)-ρ(0)]/ρ(0), follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.

    Original languageEnglish
    Article number161301
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume94
    Issue number16
    DOIs
    Publication statusPublished - 2016 Oct 13

    Fingerprint

    Diamond
    Magnetoresistance
    Hydrogen
    Diamonds
    diamonds
    hydrogen
    field effect transistors
    degrees of freedom
    orbitals
    conductivity
    Ionic Liquids
    liquids
    magnetic fields
    Field effect transistors
    Ionic liquids
    Magnetic fields

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond. / Takahide, Yamaguchi; Sasama, Yosuke; Tanaka, Masashi; Takeya, Hiroyuki; Takano, Yoshihiko; Kageura, Taisuke; Kawarada, Hiroshi.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 94, No. 16, 161301, 13.10.2016.

    Research output: Contribution to journalArticle

    Takahide, Yamaguchi ; Sasama, Yosuke ; Tanaka, Masashi ; Takeya, Hiroyuki ; Takano, Yoshihiko ; Kageura, Taisuke ; Kawarada, Hiroshi. / Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond. In: Physical Review B - Condensed Matter and Materials Physics. 2016 ; Vol. 94, No. 16.
    @article{420345d6fd36448987261746e493d5b2,
    title = "Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond",
    abstract = "We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ(B)-ρ(0)]/ρ(0), follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.",
    author = "Yamaguchi Takahide and Yosuke Sasama and Masashi Tanaka and Hiroyuki Takeya and Yoshihiko Takano and Taisuke Kageura and Hiroshi Kawarada",
    year = "2016",
    month = "10",
    day = "13",
    doi = "10.1103/PhysRevB.94.161301",
    language = "English",
    volume = "94",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "16",

    }

    TY - JOUR

    T1 - Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

    AU - Takahide, Yamaguchi

    AU - Sasama, Yosuke

    AU - Tanaka, Masashi

    AU - Takeya, Hiroyuki

    AU - Takano, Yoshihiko

    AU - Kageura, Taisuke

    AU - Kawarada, Hiroshi

    PY - 2016/10/13

    Y1 - 2016/10/13

    N2 - We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ(B)-ρ(0)]/ρ(0), follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.

    AB - We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ(B)-ρ(0)]/ρ(0), follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.

    UR - http://www.scopus.com/inward/record.url?scp=84992049066&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84992049066&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.94.161301

    DO - 10.1103/PhysRevB.94.161301

    M3 - Article

    AN - SCOPUS:84992049066

    VL - 94

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 16

    M1 - 161301

    ER -