Spin injection from Fe3Si into GaAs

A. Kawaharazuka, M. Ramsteiner, J. Herfort, H. P. Schönherr, H. Kostial, K. H. Ploog

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

Original languageEnglish
Pages (from-to)3492-3494
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number16
DOIs
Publication statusPublished - 2004 Oct 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spin injection from Fe<sub>3</sub>Si into GaAs'. Together they form a unique fingerprint.

  • Cite this

    Kawaharazuka, A., Ramsteiner, M., Herfort, J., Schönherr, H. P., Kostial, H., & Ploog, K. H. (2004). Spin injection from Fe3Si into GaAs. Applied Physics Letters, 85(16), 3492-3494. https://doi.org/10.1063/1.1807014