Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

Tomohiro Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

Original languageEnglish
Pages (from-to)4164-4167
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan
Duration: 2006 Aug 152006 Aug 18

Fingerprint

tunnel junctions
light emitting diodes
tunnel diodes
injection
electric potential
polarization
electroluminescence
electrons
valence
configurations
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction. / Kita, Tomohiro; Kohda, M.; Ohno, Y.; Matsukura, F.; Ohno, H.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, No. 12, 01.12.2006, p. 4164-4167.

Research output: Contribution to journalConference article

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AU - Kita, Tomohiro

AU - Kohda, M.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

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N2 - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

AB - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

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