Spin-polarization of excitons in GaN

Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

    Original languageEnglish
    Title of host publicationProceedings - Electrochemical Society
    EditorsH.M. Ng, A.G. Baca
    Pages320-325
    Number of pages6
    Volume6
    Publication statusPublished - 2004
    EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI
    Duration: 2004 Oct 32004 Oct 8

    Other

    OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
    CityHonolulu, HI
    Period04/10/304/10/8

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Spin-polarization of excitons in GaN. In H. M. Ng, & A. G. Baca (Eds.), Proceedings - Electrochemical Society (Vol. 6, pp. 320-325)