Spin-polarization of excitons in GaN

Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

Research output: Contribution to conferencePaper

Abstract

Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

Original languageEnglish
Pages320-325
Number of pages6
Publication statusPublished - 2004 Dec 1
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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    Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Spin-polarization of excitons in GaN. 320-325. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.