Abstract
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(lOO) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12% at the temperature of 6.5 K and the external magnetic field of 10T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 2 A |
| Publication status | Published - 2003 Feb 1 |
Keywords
- Epitaxial growth
- Fe/InAs junction
- Indium arsenide
- Spin injection
- Spintronics
- Zeeman splitting
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)