Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells

Shulong Lu, Hidetaka Nosho, Atsushi Tackeuchi, Lifeng Bian, Jianrong Dong, Zhichuan Niu

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    Abstract

    We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by timeresolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process.

    Original languageEnglish
    Pages (from-to)1002061-1002063
    Number of pages3
    JournalJapanese Journal of Applied Physics
    Volume48
    Issue number10 Part 1
    DOIs
    Publication statusPublished - 2009

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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