Spin relaxation dynamics in highly uniform InAs quantum dots

Atsushi Tackeuchi, Y. Suzuki, M. Murayama, T. Kitamura, T. Kuroda, T. Takagahara, K. Yamaguchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have investigated carrier spin dynamics in highly uniform self-assembled InAs quantum dots. The highly uniform quantum dots allowed us to observe the spin dynamics in the ground state and that in the first excited state separately, without the disturbance of inhomogeneous broadening. The spin relaxation times in the ground state and the first excited state were measured to be 1.0 ns and 0.6 ns, respectively. Our measurements reveal the absence of the carrier density dependence of the spin relaxation time. The measured spin relaxation time decreases rapidly from 1.1 ns at 10 K to 200 ps at 130 K. This large change in the spin relaxation time is well explained in terms of the mechanism of acoustic phonon emission.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages1391-1392
    Number of pages2
    Volume772
    DOIs
    Publication statusPublished - 2005 Jun 30
    EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ
    Duration: 2004 Jul 262004 Jul 30

    Other

    OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
    CityFlagstaff, AZ
    Period04/7/2604/7/30

    Fingerprint

    relaxation time
    quantum dots
    spin dynamics
    ground state
    excitation
    disturbances
    acoustics

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Tackeuchi, A., Suzuki, Y., Murayama, M., Kitamura, T., Kuroda, T., Takagahara, T., & Yamaguchi, K. (2005). Spin relaxation dynamics in highly uniform InAs quantum dots. In AIP Conference Proceedings (Vol. 772, pp. 1391-1392) https://doi.org/10.1063/1.1994633

    Spin relaxation dynamics in highly uniform InAs quantum dots. / Tackeuchi, Atsushi; Suzuki, Y.; Murayama, M.; Kitamura, T.; Kuroda, T.; Takagahara, T.; Yamaguchi, K.

    AIP Conference Proceedings. Vol. 772 2005. p. 1391-1392.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Tackeuchi, A, Suzuki, Y, Murayama, M, Kitamura, T, Kuroda, T, Takagahara, T & Yamaguchi, K 2005, Spin relaxation dynamics in highly uniform InAs quantum dots. in AIP Conference Proceedings. vol. 772, pp. 1391-1392, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, 04/7/26. https://doi.org/10.1063/1.1994633
    Tackeuchi A, Suzuki Y, Murayama M, Kitamura T, Kuroda T, Takagahara T et al. Spin relaxation dynamics in highly uniform InAs quantum dots. In AIP Conference Proceedings. Vol. 772. 2005. p. 1391-1392 https://doi.org/10.1063/1.1994633
    Tackeuchi, Atsushi ; Suzuki, Y. ; Murayama, M. ; Kitamura, T. ; Kuroda, T. ; Takagahara, T. ; Yamaguchi, K. / Spin relaxation dynamics in highly uniform InAs quantum dots. AIP Conference Proceedings. Vol. 772 2005. pp. 1391-1392
    @inproceedings{aa441623fa234e3eb98e55271a45d8a3,
    title = "Spin relaxation dynamics in highly uniform InAs quantum dots",
    abstract = "We have investigated carrier spin dynamics in highly uniform self-assembled InAs quantum dots. The highly uniform quantum dots allowed us to observe the spin dynamics in the ground state and that in the first excited state separately, without the disturbance of inhomogeneous broadening. The spin relaxation times in the ground state and the first excited state were measured to be 1.0 ns and 0.6 ns, respectively. Our measurements reveal the absence of the carrier density dependence of the spin relaxation time. The measured spin relaxation time decreases rapidly from 1.1 ns at 10 K to 200 ps at 130 K. This large change in the spin relaxation time is well explained in terms of the mechanism of acoustic phonon emission.",
    author = "Atsushi Tackeuchi and Y. Suzuki and M. Murayama and T. Kitamura and T. Kuroda and T. Takagahara and K. Yamaguchi",
    year = "2005",
    month = "6",
    day = "30",
    doi = "10.1063/1.1994633",
    language = "English",
    isbn = "0735402574",
    volume = "772",
    pages = "1391--1392",
    booktitle = "AIP Conference Proceedings",

    }

    TY - GEN

    T1 - Spin relaxation dynamics in highly uniform InAs quantum dots

    AU - Tackeuchi, Atsushi

    AU - Suzuki, Y.

    AU - Murayama, M.

    AU - Kitamura, T.

    AU - Kuroda, T.

    AU - Takagahara, T.

    AU - Yamaguchi, K.

    PY - 2005/6/30

    Y1 - 2005/6/30

    N2 - We have investigated carrier spin dynamics in highly uniform self-assembled InAs quantum dots. The highly uniform quantum dots allowed us to observe the spin dynamics in the ground state and that in the first excited state separately, without the disturbance of inhomogeneous broadening. The spin relaxation times in the ground state and the first excited state were measured to be 1.0 ns and 0.6 ns, respectively. Our measurements reveal the absence of the carrier density dependence of the spin relaxation time. The measured spin relaxation time decreases rapidly from 1.1 ns at 10 K to 200 ps at 130 K. This large change in the spin relaxation time is well explained in terms of the mechanism of acoustic phonon emission.

    AB - We have investigated carrier spin dynamics in highly uniform self-assembled InAs quantum dots. The highly uniform quantum dots allowed us to observe the spin dynamics in the ground state and that in the first excited state separately, without the disturbance of inhomogeneous broadening. The spin relaxation times in the ground state and the first excited state were measured to be 1.0 ns and 0.6 ns, respectively. Our measurements reveal the absence of the carrier density dependence of the spin relaxation time. The measured spin relaxation time decreases rapidly from 1.1 ns at 10 K to 200 ps at 130 K. This large change in the spin relaxation time is well explained in terms of the mechanism of acoustic phonon emission.

    UR - http://www.scopus.com/inward/record.url?scp=33749473363&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33749473363&partnerID=8YFLogxK

    U2 - 10.1063/1.1994633

    DO - 10.1063/1.1994633

    M3 - Conference contribution

    SN - 0735402574

    SN - 9780735402577

    VL - 772

    SP - 1391

    EP - 1392

    BT - AIP Conference Proceedings

    ER -