Abstract
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.
| Original language | English |
|---|---|
| Article number | 04C199 |
| Journal | Japanese journal of applied physics |
| Volume | 48 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2009 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Umi, T., Nosho, H., Lu, S., Li, L., Fiore, A., & Tackeuchi, A. (2009). Spin relaxation in InAs columnar quantum dots. Japanese journal of applied physics, 48(4 PART 2), [04C199]. https://doi.org/10.1143/JJAP.48.04C199