Spin relaxation in InAs columnar quantum dots

Takehiko Umi, Hidetaka Nosho, Shulong Lu, Lianhe Li, Andrea Fiore, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    Abstract

    We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.

    Original languageEnglish
    Article number04C199
    JournalJapanese Journal of Applied Physics
    Volume48
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2009 Apr

    Fingerprint

    Semiconductor quantum dots
    Photoluminescence
    quantum dots
    photoluminescence
    Relaxation time
    relaxation time
    Spin dynamics
    decay
    spin dynamics
    Wave functions
    Seed
    seeds
    Monolayers
    wave functions
    Electrons
    electrons

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Spin relaxation in InAs columnar quantum dots. / Umi, Takehiko; Nosho, Hidetaka; Lu, Shulong; Li, Lianhe; Fiore, Andrea; Tackeuchi, Atsushi.

    In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C199, 04.2009.

    Research output: Contribution to journalArticle

    Umi, Takehiko ; Nosho, Hidetaka ; Lu, Shulong ; Li, Lianhe ; Fiore, Andrea ; Tackeuchi, Atsushi. / Spin relaxation in InAs columnar quantum dots. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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