Abstract
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.
| Original language | English |
|---|---|
| Article number | 04C199 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2009 Apr |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Spin relaxation in InAs columnar quantum dots. / Umi, Takehiko; Nosho, Hidetaka; Lu, Shulong; Li, Lianhe; Fiore, Andrea; Tackeuchi, Atsushi.
In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C199, 04.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spin relaxation in InAs columnar quantum dots
AU - Umi, Takehiko
AU - Nosho, Hidetaka
AU - Lu, Shulong
AU - Li, Lianhe
AU - Fiore, Andrea
AU - Tackeuchi, Atsushi
PY - 2009/4
Y1 - 2009/4
N2 - We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.
AB - We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.
UR - http://www.scopus.com/inward/record.url?scp=77952484346&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952484346&partnerID=8YFLogxK
U2 - 10.1143/JJAP.48.04C199
DO - 10.1143/JJAP.48.04C199
M3 - Article
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04C199
ER -