Spin relaxation in InAs columnar quantum dots

Takehiko Umi; Hidetaka Nosho; Shulong Lu; Lianhe Li; Andrea Fiore; Atsushi Tackeuchi

doi:10.1143/JJAP.48.04C199

Spin relaxation in InAs columnar quantum dots

Takehiko Umi, Hidetaka Nosho, Shulong Lu, Lianhe Li, Andrea Fiore, Atsushi Tackeuchi

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Abstract

We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.

Original language	English
Article number	04C199
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C199
Publication status	Published - 2009 Apr

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ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Umi, T., Nosho, H., Lu, S., Li, L., Fiore, A., & Tackeuchi, A. (2009). Spin relaxation in InAs columnar quantum dots. Japanese Journal of Applied Physics, 48(4 PART 2), [04C199]. https://doi.org/10.1143/JJAP.48.04C199

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AU - Tackeuchi, Atsushi

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10.1143/JJAP.48.04C199