Spin relaxation in InAs columnar quantum dots

Takehiko Umi, Hidetaka Nosho, Shulong Lu, Lianhe Li, Andrea Fiore, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    Abstract

    We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir-Aronov-Pikus process is the main spin relaxation mechanism.

    Original languageEnglish
    Article number04C199
    JournalJapanese Journal of Applied Physics
    Volume48
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2009 Apr

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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