Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura

Research output: Contribution to journalArticlepeer-review

1158 Citations (Scopus)

Abstract

Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

Original languageEnglish
Pages (from-to)4188-4190
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number27
DOIs
Publication statusPublished - 1996 Dec 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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