Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Kawarada, H. Umezawa

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are -790 mAmm and 45 GHz, respectively, which are higher than those of single-crystal diamond FETs fabricated on (001) homoepitaxial diamond films. The hole carrier density of the hole accumulation layer depends on the orientation of the hydrogen-terminated diamond surface, for which (110) preferentially oriented films show 50%-70% lower sheet resistance than a (001) substrate. We propose that the hole density of the surface accumulation layer is proportional to the C-H bond density on the surface.

Original languageEnglish
Article number112107
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008 Mar 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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