Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

K. Hirama*, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Kawarada, H. Umezawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)

Abstract

Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are -790 mAmm and 45 GHz, respectively, which are higher than those of single-crystal diamond FETs fabricated on (001) homoepitaxial diamond films. The hole carrier density of the hole accumulation layer depends on the orientation of the hydrogen-terminated diamond surface, for which (110) preferentially oriented films show 50%-70% lower sheet resistance than a (001) substrate. We propose that the hole density of the surface accumulation layer is proportional to the C-H bond density on the surface.

Original languageEnglish
Article number112107
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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