Sputtered Si surface irradiated by metal cluster complex ions such as Os3(CO)12 and Ir4(CO)12

Yoshikazu Teranishi, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Toshiyuki Fujimoto, Shingo Ichimura, Misuhiro Tomita

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The surface sputtering of Si using a proto-type ion gun to utilize metal cluster complexes as ion source has been investigated in detail mainly using Auger spectroscopy and atomic force microscope. The Si surface was found to be successfully sputtered with a high sputtering yield and yet resulting in a reasonably smooth surface. However, the sputtered surface roughness behavior against the incident angle of the ion beam show strong dependence to the accelerating energy of the cluster ions, which could be explained by the balance between the sputtering effect and deposition of ions themselves.

Original languageEnglish
Pages (from-to)670-676
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

Keywords

  • AFM
  • Ion cluster
  • Roughness
  • Sputter

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Sputtered Si surface irradiated by metal cluster complex ions such as Os<sub>3</sub>(CO)<sub>12</sub> and Ir<sub>4</sub>(CO)<sub>12</sub>'. Together they form a unique fingerprint.

  • Cite this