Stable phase boundaries between the 7 × 7 and the 5 × 2 Au structures on a Si(111) surface studied by high-temperature STM

Tsuyoshi Hasegawa, Shigeyuki Hosoki, Katsumichi Yagi

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Phase boundaries between the 7 × 7 and the 5 × 2 Au structures on a Si(111) surface, which were located along the two-fold direction of the 5 × 2 structure, were dynamically studied using high-temperature scanning tunneling microscopy (STM) during Au deposition at 500°C. Two types of stable phase boundaries were observed depending on the growth direction of the 5 × 2 domain. The stable phase boundaries had adatoms of the unfaulted half at the edge of the 7 × 7 side. The formation of an unstable phase boundary was quickly followed by the growth of new rows of the 5 × 2 structure next to the boundary which formed a stable phase boundary. These results suggest that the stacking fault of the 7 × 7 structure at a phase boundary is unstable.

Original languageEnglish
Pages (from-to)L295-L299
JournalSurface Science
Issue number1-3
Publication statusPublished - 1996 Jun 1



  • Gold
  • Scanning tunneling microscopy
  • Si(111)-5 × 2Au
  • Silicon
  • Surface reconstruction
  • Surface structure
  • Surface thermodynamics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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