Stacking fault formation in highly nitrogen-doped 4H-SiC substrates with different surface preparation conditions

M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino, K. Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface roughness showed a resistivity increase after annealing at 1100°C, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of the substrates, which indicates that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates. In this regard, mechano-chemically polished (MCP) substrates with a minimum surface roughness (< 0.3 nm) exhibited no resistivity increase and very few stacking faults after annealing even when the nitrogen concentration of the substrates exceeded 1×1019 cm-3.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages341-344
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - 2009 Jan 1
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 2007 Oct 142007 Oct 19

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

Keywords

  • Low resistivity
  • Nitrogen
  • SiC
  • Stacking faults
  • Surface roughness

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Katsuno, M., Nakabayashi, M., Fujimoto, T., Ohtani, N., Yashiro, H., Tsuge, H., Aigo, T., Hoshino, T., & Tatsumi, K. (2009). Stacking fault formation in highly nitrogen-doped 4H-SiC substrates with different surface preparation conditions. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 341-344). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.