Stacking fault formation in highly nitrogen-doped 4H-SiC substrates with different surface preparation conditions

M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino, K. Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

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