Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi, Sergio Bietti, Ayami Takata, Yoshitaka Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor quantum dots (QDs) grown using self-assembly techniques in the Stranski- Krastanov (S-K) mode are expected to be useful for high-performance optical devices such as QD lasers. A significant amount of research has been carried out on the development of highperformance QD lasers because they offer the advantages of a low threshold current, temperature stability, high modulation bandwidth, and low chirp. To realize these high-performance devices, the surface QD density should be increased by fabricating a stacked structure. We have developed a growth method based on a strain-compensation technique that enables the fabrication of a high number of stacked InAs QD layers on an InP(311)B substrate. In this study, we employed the proposed method to fabricate QD laser diodes consisting of highly stacked QD layers and investigated the dependence of the diode parameters on the stacking layer number. We fabricated QD laser diodes with 5, 10, 15, and 20 QD layers in the active region. All of the laser diodes operated at around 1.55 μm at room temperature, and their threshold currents showed clear dependence on the stacking layer number. Laser diodes with more than 10 QD layers showed sufficient gain, i.e., the threshold currents decreased with a decrease in the cavity length. On the other hand, for laser diodes with less than 10 QD layers, the threshold currents increased with a decrease in the cavity length.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8277
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers XI - San Francisco, CA, United States
Duration: 2012 Jan 232012 Jan 26

Other

OtherNovel In-Plane Semiconductor Lasers XI
CountryUnited States
CitySan Francisco, CA
Period12/1/2312/1/26

Fingerprint

Quantum dot lasers
Laser Diode
Stacking
Quantum Dots
Semiconductor quantum dots
Semiconductor lasers
semiconductor lasers
quantum dots
threshold currents
Cavity
Optical devices
Compensation and Redress
indium arsenide
High Performance
Self assembly
Laser
Diodes
Decrease
cavities
Chirp

Keywords

  • Highly stacking
  • Quantum dot
  • Semiconductor laser
  • Strain-compensation

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Akahane, K., Yamamoto, N., Kawanishi, T., Bietti, S., Takata, A., & Okada, Y. (2012). Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8277). [827703] https://doi.org/10.1117/12.907533

Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya; Bietti, Sergio; Takata, Ayami; Okada, Yoshitaka.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8277 2012. 827703.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N, Kawanishi, T, Bietti, S, Takata, A & Okada, Y 2012, Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8277, 827703, Novel In-Plane Semiconductor Lasers XI, San Francisco, CA, United States, 12/1/23. https://doi.org/10.1117/12.907533
Akahane K, Yamamoto N, Kawanishi T, Bietti S, Takata A, Okada Y. Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8277. 2012. 827703 https://doi.org/10.1117/12.907533
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya ; Bietti, Sergio ; Takata, Ayami ; Okada, Yoshitaka. / Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8277 2012.
@inproceedings{faf60835d9c94eca823942594700eaf2,
title = "Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique",
abstract = "Semiconductor quantum dots (QDs) grown using self-assembly techniques in the Stranski- Krastanov (S-K) mode are expected to be useful for high-performance optical devices such as QD lasers. A significant amount of research has been carried out on the development of highperformance QD lasers because they offer the advantages of a low threshold current, temperature stability, high modulation bandwidth, and low chirp. To realize these high-performance devices, the surface QD density should be increased by fabricating a stacked structure. We have developed a growth method based on a strain-compensation technique that enables the fabrication of a high number of stacked InAs QD layers on an InP(311)B substrate. In this study, we employed the proposed method to fabricate QD laser diodes consisting of highly stacked QD layers and investigated the dependence of the diode parameters on the stacking layer number. We fabricated QD laser diodes with 5, 10, 15, and 20 QD layers in the active region. All of the laser diodes operated at around 1.55 μm at room temperature, and their threshold currents showed clear dependence on the stacking layer number. Laser diodes with more than 10 QD layers showed sufficient gain, i.e., the threshold currents decreased with a decrease in the cavity length. On the other hand, for laser diodes with less than 10 QD layers, the threshold currents increased with a decrease in the cavity length.",
keywords = "Highly stacking, Quantum dot, Semiconductor laser, Strain-compensation",
author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi and Sergio Bietti and Ayami Takata and Yoshitaka Okada",
year = "2012",
doi = "10.1117/12.907533",
language = "English",
isbn = "9780819489203",
volume = "8277",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

AU - Bietti, Sergio

AU - Takata, Ayami

AU - Okada, Yoshitaka

PY - 2012

Y1 - 2012

N2 - Semiconductor quantum dots (QDs) grown using self-assembly techniques in the Stranski- Krastanov (S-K) mode are expected to be useful for high-performance optical devices such as QD lasers. A significant amount of research has been carried out on the development of highperformance QD lasers because they offer the advantages of a low threshold current, temperature stability, high modulation bandwidth, and low chirp. To realize these high-performance devices, the surface QD density should be increased by fabricating a stacked structure. We have developed a growth method based on a strain-compensation technique that enables the fabrication of a high number of stacked InAs QD layers on an InP(311)B substrate. In this study, we employed the proposed method to fabricate QD laser diodes consisting of highly stacked QD layers and investigated the dependence of the diode parameters on the stacking layer number. We fabricated QD laser diodes with 5, 10, 15, and 20 QD layers in the active region. All of the laser diodes operated at around 1.55 μm at room temperature, and their threshold currents showed clear dependence on the stacking layer number. Laser diodes with more than 10 QD layers showed sufficient gain, i.e., the threshold currents decreased with a decrease in the cavity length. On the other hand, for laser diodes with less than 10 QD layers, the threshold currents increased with a decrease in the cavity length.

AB - Semiconductor quantum dots (QDs) grown using self-assembly techniques in the Stranski- Krastanov (S-K) mode are expected to be useful for high-performance optical devices such as QD lasers. A significant amount of research has been carried out on the development of highperformance QD lasers because they offer the advantages of a low threshold current, temperature stability, high modulation bandwidth, and low chirp. To realize these high-performance devices, the surface QD density should be increased by fabricating a stacked structure. We have developed a growth method based on a strain-compensation technique that enables the fabrication of a high number of stacked InAs QD layers on an InP(311)B substrate. In this study, we employed the proposed method to fabricate QD laser diodes consisting of highly stacked QD layers and investigated the dependence of the diode parameters on the stacking layer number. We fabricated QD laser diodes with 5, 10, 15, and 20 QD layers in the active region. All of the laser diodes operated at around 1.55 μm at room temperature, and their threshold currents showed clear dependence on the stacking layer number. Laser diodes with more than 10 QD layers showed sufficient gain, i.e., the threshold currents decreased with a decrease in the cavity length. On the other hand, for laser diodes with less than 10 QD layers, the threshold currents increased with a decrease in the cavity length.

KW - Highly stacking

KW - Quantum dot

KW - Semiconductor laser

KW - Strain-compensation

UR - http://www.scopus.com/inward/record.url?scp=84857494189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857494189&partnerID=8YFLogxK

U2 - 10.1117/12.907533

DO - 10.1117/12.907533

M3 - Conference contribution

AN - SCOPUS:84857494189

SN - 9780819489203

VL - 8277

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -