Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth

T. Ishimaru, K. Shimada, T. Hoshino, Hiroyuki Kawada, I. Ohdomari

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    The formation and the annihilation rates of stacking fault (SF) half-units were precisely determined from the high-temperature scanning tunneling microscopy (STM) observation of dimer-adatom-stacking-fault (DAS) domains grown on quenched Si(111) surface at 485°C, as a function of the number of corner holes shared by a preexisting large domain and a newly born single SF triangle. In contrast to the general nucleation and growth with a single atom as a building unit, in the nucleation and growth of a nXn DAS domain with a single SF half-unit as a building unit, Gibbs free energy as a function of the number of SF half-units has discrete values. This feature is reflected in the behavior of a newly born SF half-unit adjacent to a larger DAS domain. For the SF half-units sharing one corner hole, the formation rate was lower than the annihilation rate due to the greater contribution of periphery strain to the increase in the Gibbs free energy than that of area increase. For the formation of the SF half-unit sharing two corner holes, the annihilation rate was negligibly small, suggesting that the addition of this single SF triangle increases the domain area keeping the periphery length constant, which results in Gibbs free energy reduction.

    Original languageEnglish
    Pages (from-to)18-22
    Number of pages5
    JournalApplied Surface Science
    Volume130-132
    Publication statusPublished - 1998 Jun

    Fingerprint

    Adatoms
    Stacking faults
    Gibbs free energy
    crystal defects
    Dimers
    adatoms
    dimers
    curves
    triangles
    Nucleation
    nucleation
    Scanning tunneling microscopy
    scanning tunneling microscopy

    Keywords

    • Annihilation rate
    • DAS domain
    • Formation rate
    • Nucleation and growth
    • Quantized Gibbs free energy change
    • Si(111) surface

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

    Cite this

    Ishimaru, T., Shimada, K., Hoshino, T., Kawada, H., & Ohdomari, I. (1998). Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth. Applied Surface Science, 130-132, 18-22.

    Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth. / Ishimaru, T.; Shimada, K.; Hoshino, T.; Kawada, Hiroyuki; Ohdomari, I.

    In: Applied Surface Science, Vol. 130-132, 06.1998, p. 18-22.

    Research output: Contribution to journalArticle

    Ishimaru, T, Shimada, K, Hoshino, T, Kawada, H & Ohdomari, I 1998, 'Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth', Applied Surface Science, vol. 130-132, pp. 18-22.
    Ishimaru, T. ; Shimada, K. ; Hoshino, T. ; Kawada, Hiroyuki ; Ohdomari, I. / Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth. In: Applied Surface Science. 1998 ; Vol. 130-132. pp. 18-22.
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