STM modification of MoS2 in the nanometer-scale using a gas-solid reaction

Makiko Kohno, Takahisa Doi, Tsuyoshi Hasegawa, Satoshi Tomimatsu, Shigeyuki Hosoki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the nanometer-scale modification of a MoS2 surface by scanning tunneling microscopy (STM) with an electric field lower than that required for field evaporation by STM. It is known that a Pt-Ir STM tip dissolves H2 gas into atomic hydrogen which is chemically active. We applied this phenomenon to STM modification to lower the electric field necessary for atom detachment. A Pt-Ir tip was used to dissolve the H2 gas on the MoS2 surface. The gas-solid reaction enhanced the evaporation of the top-layer sulfur atoms, which were removed at a low electric field of about 2.4 V nm-1. The present study shows that we can control STM modification well with the same feedback loop as that used for STM observation.

Original languageEnglish
Pages (from-to)588-590
Number of pages3
JournalThin Solid Films
Volume281-282
Issue number1-2
DOIs
Publication statusPublished - 1996 Aug 1
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
scanning tunneling microscopy
Gases
gases
Electric fields
electric fields
Evaporation
evaporation
Atoms
monatomic gases
detachment
Sulfur
atoms
Hydrogen
sulfur
Feedback
hydrogen

Keywords

  • Molybdenum
  • Scanning tunnelling microscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

STM modification of MoS2 in the nanometer-scale using a gas-solid reaction. / Kohno, Makiko; Doi, Takahisa; Hasegawa, Tsuyoshi; Tomimatsu, Satoshi; Hosoki, Shigeyuki.

In: Thin Solid Films, Vol. 281-282, No. 1-2, 01.08.1996, p. 588-590.

Research output: Contribution to journalArticle

Kohno, Makiko ; Doi, Takahisa ; Hasegawa, Tsuyoshi ; Tomimatsu, Satoshi ; Hosoki, Shigeyuki. / STM modification of MoS2 in the nanometer-scale using a gas-solid reaction. In: Thin Solid Films. 1996 ; Vol. 281-282, No. 1-2. pp. 588-590.
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